SiGe Heterojunction Bipolar Transistors

SiGe Heterojunction Bipolar Transistors

1. Aufl.

von: Peter Ashburn

116,99 €

Verlag: Wiley
Format: PDF
Veröffentl.: 06.02.2004
ISBN/EAN: 9780470090732
Sprache: englisch
Anzahl Seiten: 286

DRM-geschütztes eBook, Sie benötigen z.B. Adobe Digital Editions und eine Adobe ID zum Lesen.


SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Preface. Physical Constants Properties of Silicon and Silicon-Germanium. List of Symbols. 1. Introduction. 2. Basic Bipolar Transistor Theory. 3. Heavy Doping Effects. 4. Second-Order Effects. 5. High-Frequency Performance. 6. Polysilicon Emitters. 7. Properties and Growth of Silicon-Germanium. 8. Silicon-Germanium Heterojunction Bipolar Transistors. 9. Silicon Bipolar Technology. 10. Silicon-Germanium Heterojunction Bipolar Technology. 11. Compact Models of Bipolar Transistors. 12. Optimization of Silicon and Silicon-Germanium Bipolar Technologies. References. Index.
Professor Ashburn has worked as an industrial engineer, a consultant and a university professor and has accumulated a wealth of practical knowledge for incorporation in this book.
Remarkable developments in bipolar technology over the past decade have seen the silicon–germanium heterojunction bipolar transistor (SiGe HBT) emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high-frequency wireless and optical communications applications that were previously only possible in III/V and II/VI devices. This book brings together for the first time all the new developments and describes in a unified manner the physics, materials science and technology of silicon bipolar transistors and SiGe HBTs. Featuring: Basic device physics concepts presented in a simple and concise way. All the key technology innovations in detail, including polysilicon emitters, selective implanted collectors, selective and differential SiGe(C) epitaxy, and technology case studies. Compact models of bipolar transistors, including Gummel Poon, Mextram and VBIC. Overall bipolar technology, device and circuit optimisation. SiGe Heterojunction Bipolar Transistors is an essential tool for practising process engineers and integrated circuit designers in the semiconductor, optical communications and wireless communications industries. University researchers, scientists and postgraduates students in microelectronics, semiconductors and electronic engineering will find this book an invaluable reference. Professor Ashburn has worked as an industrial engineer, a consultant and a university professor and has accumulated a wealth of practical knowledge for incorporation in this book.

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