Table of Contents
Cover
Title Page
Copyright
List of Contributors
Preface
References
Acknowledgments
Part I: Future of Digital Silicon
1.1: Prospects of Future Si Technologies in the Data-Driven World
1 Introduction
2 Memory – DRAM
3 Memory – NAND
4 Logic technology
5 CMOS image sensors
6 Packaging technology
7 Silicon photonics technology
8 Concluding remarks
Acknowledgments
References
1.2: How Lithography Enables Moore's Law
1 Introduction
2 Moore's Law and the contribution of lithography
3 Lithography technology: past and present
4 Lithography technology: future
5 Summary
6 Conclusion
Acknowledgments
References
1.3: What Happened to Post-CMOS?
1 Introduction
2 General constraints on speed and energy
3 Guidelines for success
4 Benchmarking and examples
5 Discussion
6 Conclusion
Acknowledgments
References
1.4: Three-Dimensional Integration of Ge and Two-Dimensional Materials for One-Dimensional Devices
1 Introduction
2 FEOL technology and materials for 3D integration
3 Integration of “more than Moore” functionality
4 Implications of 3D integration at the system level
5 Conclusion
Acknowledgments
References
1.5: Challenges to Ultralow-Power Semiconductor Device Operation
1 Introduction
2 Ultimate MOS transistors
3 Small slope switches
4 Conclusion
Acknowledgments
References
1.6: A Universal Nonvolatile Processing Environment
1 Introduction
2 Universal nonvolatile processing environment
3 Bias-field-free spin-torque oscillator
4 Summary
Acknowledgments
References
1.7: Can MRAM (Finally) Be a Factor?
1 Introduction
2 What is MRAM?
3 Current limitations for stand-alone memories
4 Immediate opportunities: embedded memories
5 Conclusion
References
1.8: Nanomanufacturing for Electronics or Optoelectronics
1 Introduction
2 Nano-LEGO
®
3 Tunnel devices
4 Split-gate transistors
5 Other nanoscale systems
6 Conclusion
Acknowledgments
References
Part II: New Materials and New Physics
2.1: Surface Waves Everywhere
1 Introduction
2 Water waves
3 Surface acoustic waves
4 Surface plasma waves and polaritons
5 Plasma waves in two-dimensional structures
6 Electronic surface states in solids
7 Dyakonov surface waves (DSWs)
References
2.2: Graphene and Atom-Thick 2D Materials: Device Application Prospects
1 Introduction
2 Conventional low-dimensional systems
3 New atomically thin material systems
4 Device application of new material systems
5 Components in Si technology
6 Graphene on Ge
7 Conclusion
References
2.3: Computing with Coupled Relaxation Oscillators
1 Introduction
2 Vanadium dioxide-based relaxation oscillators
3 Experimental demonstration of pairwise coupled HVFET oscillators
4 Computing with pairwise coupled HVFET oscillators
5 Associative computing using pairwise coupled oscillators
6 Conclusion
References
2.4: On the Field-Induced Insulator–Metal Transition in VO
2
Films
1 Introduction
2 Electron concentration-induced transition
3 Field-induced transition in a film
4 Need for a ground plane
5 Conclusion
References
2.5: Group IV Alloys for Advanced Nano- and Optoelectronic Applications
1 Introduction
2 Epitaxial growth of GeSn layers by reactive gas source epitaxy
3 Optically pumped GeSn laser
4 Potential of GeSn alloys for electronic devices
5 Conclusion
Acknowledgments
References
2.6: High Sn-Content GeSn Light Emitters for Silicon Photonics
1 Introduction
2 Experimental details of the GeSn material system
3 Direct bandgap GeSn light emitting diodes
4 Group IV GeSn microdisk laser on Si(100)
5 Conclusion and outlook
References
2.7: Gallium Nitride-Based Lateral and Vertical Nanowire Devices
1 Introduction
2 Crystallographic study of GaN nanowires using TMAH wet etching
3 Ω-shaped-gate lateral AlGaN/GaN FETs
4 Gate-all-around vertical GaN FETs
5 Conclusion
Acknowledgments
References
2.8: Scribing Graphene Circuits
1 Introduction
2 Graphene oxide from graphite
3 GO exfoliation
4 Selective reduction of graphene oxide
5 Raman spectroscopy
6 Electrical properties of graphene oxide and reduced graphene oxide
7 Future perspectives
Acknowledgments
References
2.9: Structure and Electron Transport in Irradiated Monolayer Graphene
1 Introduction
2 Samples
3 Raman scattering (RS) spectra
4 Sample resistance
5 Hopping magnetoresistance
References
2.10: Interplay of Coulomb Blockade and Luttinger-Liquid Physics in Disordered 1D InAs Nanowires with Strong Spin–Orbit Coupling
1 Introduction
2 Sample preparation and the experimental setup
3 Experimental results
4 Conclusion
Acknowledgments
References
Part III: Microelectronics in Health, Energy Harvesting, and Communications
3.1: Image-Guided Intervention and Therapy: The First Time Right
1 Introduction
2 Societal challenge: Rapid rise of cardiovascular diseases
3 Societal challenge: Rapid rise of cancer
4 Drivers of change in healthcare
5 Conclusion
Acknowledgments
References
3.2: Rewiring the Nervous System, Without Wires
1 Introduction
2 Why go wireless?
3 One wireless recording solution used to explore primary motor cortex control of locomotion
4 Writing into the nervous system with epidural electrical stimulation of spinal circuits effectively modulates gait
5 Genetic technology brings a better model to neuroscience
6 The wireless bridge for closed-loop control and rehabilitation
7 Conclusion
Acknowledgments
References
3.3: Nanopower-Integrated Electronics for Energy Harvesting, Conversion, and Management
1 Introduction
2 Commercial ICs for micropower harvesting
3 State-of-the-art integrated nanocurrent power converters for energy-harvesting applications
4 A multisource-integrated energy-harvesting circuit
5 Conclusion
Acknowledgments
References
3.4: Will Composite Nanomaterials Replace Piezoelectric Thin Films for Energy Transduction Applications?
1 Introduction
2 Thin film piezoelectric materials and applications
3 Individual ZnO and GaN piezoelectric nanowires: experiments and simulations
4 Piezoelectric composite materials using nanowires
5 Conclusion
Acknowledgments
References
3.5: New Generation of Vertical-Cavity Surface-Emitting Lasers for Optical Interconnects
1 Introduction
2 VCSEL requirements
3 Optical leakage
4 Experiment
5 Simulation
6 Conclusion
Acknowledgments
References
3.6: Reconfigurable Infrared Photodetector Based on Asymmetrically Doped Double Quantum Wells for Multicolor and Remote Temperature Sensing
1 Introduction
2 Fabrication of DQWIP with asymmetrical doping
3 Optoelectronic characterization of DQWIPs
4 Temperature sensing
5 Conclusion
Acknowledgments
References
3.7: Tunable Photonic Molecules for Spectral Engineering in Dense Photonic Integration
1 Introduction
2 Photonic molecules and their spectral features
3 Coupling-controlled mode-splitting: GHz-operation on a tight footprint
4 Reconfigurable spectral control
5 Toward reconfigurable mode-splitting control
6 Conclusion
Acknowledgments
References
Index
End User License Agreement
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Guide
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