Details

Physics of Semiconductor Devices


Physics of Semiconductor Devices


4. Aufl.

von: Simon M. Sze, Yiming Li, Kwok K. Ng

103,99 €

Verlag: Wiley
Format: PDF
Veröffentl.: 24.03.2021
ISBN/EAN: 9781119429135
Sprache: englisch
Anzahl Seiten: 944

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Beschreibungen

<p><b>The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices </b></p> <p>The Fourth Edition of <i>Physics of Semiconductor Devices</i> remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.  </p> <p>Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices: </p> <ul> <li>Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices </li> <li>Offers completely updated and revised information that reflects advances in device concepts, performance, and application </li> <li>Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy </li> <li>Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual for Instructor's only</li> <li>Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors </li> </ul> <p><i>Physics of Semiconductor Devices, Fourth Edition</i> is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field. </p>
<p>Introduction 1</p> <p>Part I Semiconductor Physics</p> <p>Chapter 1 Physics and Properties of Semiconductors—A Review 7</p> <p>1.1 Introduction, 7</p> <p>1.2 Crystal Structure, 8</p> <p>1.3 Energy Bands and Energy Gap, 11</p> <p>1.4 Carrier Concentration at Thermal Equilibrium, 15</p> <p>1.5 Carrier-Transport Phenomena, 26</p> <p>1.6 Phonon, Optical, and Thermal Properties, 47</p> <p>1.7 Heterojunctions and Nanostructures, 52</p> <p>1.8 Basic Equations and Examples, 60</p> <p>Part II Device Building Blocks</p> <p>Chapter 2 p-n Junctions 79</p> <p>2.1 Introduction, 79</p> <p>2.2 Depletion Region, 80</p> <p>2.3 Current-Voltage Characteristics, 91</p> <p>2.4 Junction Breakdown, 102</p> <p>2.5 Transient Behavior and Noise, 115</p> <p>2.6 Terminal Functions, 119</p> <p>2.7 Heterojunctions, 126</p> <p>Chapter 3 Metal-Semiconductor Contacts 136</p> <p>3.1 Introduction, 136</p> <p>3.2 Formation of Barrier, 137</p> <p>3.3 Current Transport Processes, 155</p> <p>3.4 Measurement of Barrier Height, 173</p> <p>3.5 Device Structures, 183</p> <p>3.6 Ohmic Contact, 190</p> <p>Chapter 4 Metal-Insulator-Semiconductor Capacitors 200</p> <p>4.1 Introduction, 200</p> <p>4.2 Ideal MIS Capacitor, 201</p> <p>4.3 Silicon MOS Capacitor, 214</p> <p>4.4 Carrier Transport in MOS Capacitor, 241</p> <p>Part III Transistors</p> <p>Chapter 5 Bipolar Transistors 263</p> <p>5.1 Introduction, 263</p> <p>5.2 Static Characteristics, 264</p> <p>5.3 Compact Models of Bipolar Transistors, 283</p> <p>5.4 Microwave Characteristics, 293</p> <p>5.5 Related Device Structures, 306</p> <p>5.6 Heterojunction Bipolar Transistor, 312</p> <p>5.7 Self-Heating Effects, 318</p> <p>Chapter 6 MOSFETs 329</p> <p>6.1 Introduction, 329</p> <p>6.2 Basic Device Characteristics, 334</p> <p>6.3 Nonuniform Doping and Buried-Channel Device, 360</p> <p>6.4 Device Scaling and Short-Channel Effects, 373</p> <p>6.5 MOSFET Structures, 391</p> <p>6.6 Circuit Applications, 403</p> <p>6.7 NCFET and TFET, 408</p> <p>6.8 Single-Electron Transistor, 414</p> <p>Chapter 7 Nonvolatile Memory Devices 434</p> <p>7.1 Introduction, 434</p> <p>7.2 The Concept of Floating Gate, 435</p> <p>7.3 Device Structures, 440</p> <p>7.4 Compact Model of Floating-Gate Memory Cells, 447</p> <p>7.5 Multi-Level Cells and 3-Dimensional Structures, 450</p> <p>7.6 Applications and Scaling Challenges, 463</p> <p>7.7 Alternative Structures, 467</p> <p>Chapter 8 JFETs, MESFETs, and MODFETs 486</p> <p>8.1 Introduction, 486</p> <p>8.2 JFET and MESFET, 487</p> <p>8.3 MODFET, 511</p> <p>Part IV Negative-Resistance and Power Devices</p> <p>Chapter 9 Tunnel Devices 539</p> <p>9.1 Introduction, 539</p> <p>9.2 Tunnel Diode, 540</p> <p>9.3 Related Tunnel Devices, 554</p> <p>9.4 Resonant-Tunneling Diode, 571</p> <p>Chapter 10 IMPATT Diodes, TED and RST Devices 585</p> <p>10.1 Introduction, 585</p> <p>10.2 IMPATT Diodes, 586</p> <p>10.3 Transferred-Electron Devices, 616</p> <p>10.4 Real-Space-Transfer Devices, 636</p> <p>Chapter 11 Thyristors and Power Devices 649</p> <p>11.1 Introduction, 649</p> <p>11.2 Thyristor Characteristics, 650</p> <p>11.3 Thyristor Variations, 670</p> <p>11.4 Other Power Devices, 676</p> <p>Part V Photonic Devices and Sensors</p> <p>Chapter 12 LEDs and Lasers 697</p> <p>12.1 Introduction, 697</p> <p>12.2 Radiative Transitions, 698</p> <p>12.3 Light-Emitting Diode (LED), 703</p> <p>12.4 Laser Physics, 715</p> <p>12.5 Laser Operating Characteristics, 723</p> <p>12.6 Specialty Lasers, 742</p> <p>Chapter 13 Photodetectors and Solar Cells 755</p> <p>13.1 Introduction, 755</p> <p>13.2 Photoconductor, 759</p> <p>13.3 Photodiodes, 762</p> <p>13.4 Avalanche Photodiode, 772</p> <p>13.5 Phototransistor, 782</p> <p>13.6 Charge-Coupled Device (CCD), 785</p> <p>13.7 Metal-Semiconductor-Metal Photodetector, 799</p> <p>13.8 Quantum-Well Infrared Photodetector (QWIP), 802</p> <p>13.9 Solar Cell, 806</p> <p>Chapter 14 Sensors 835</p> <p>14.1 Introduction, 835</p> <p>14.2 Thermal Sensors, 837</p> <p>14.3 Mechanical Sensors, 843</p> <p>14.4 Magnetic Sensors, 852</p> <p>14.5 Chemical Sensors, 862</p> <p>14.6 Biosensors, 867</p> <p>Appendixes 875</p> <p>A. List of Symbols, 877</p> <p>B. International System of Units, 887</p> <p>C. Unit Prefixes, 888</p> <p>D. Greek Alphabet, 889</p> <p>E. Physical Constants, 890</p> <p>F. Properties of Important Semiconductors, 891</p> <p>G. The Bloch Theorem and the Periodic Energy in the Reciprocal Lattice, 892</p> <p>H. Properties of Si and GaAs, 894</p> <p>I. The Derivations of Boltzmann Transport Equation and</p> <p>Hydrodynamic Model, 895</p> <p>J. Properties of SiO2 and Si3N4, 901</p> <p>K. Compact Models of Bipolar Transistors, 902</p> <p>L. Discovery of the Floating-Gate Memory Effect, 910</p> <p>Index 913</p>
<p><b>S. M. SZE,</b> <b>P<small>H</small>D,</b> is Honorary Chair Professor, College of Electrical and Computer Engineering, National Chiao Tung University, Taiwan. He has made fundamental and pioneering contributions to semiconductor devices, particularly his co-discovery of the floating-gate memory (FGM) effect that has ushered in the Fourth Industrial Revolution. Dr. Sze has authored, co-authored, and edited more than 400 papers and 16 books. He is a celebrated Member of IEEE, an Academician of Academia Simica, and a member of the US National Academy of Engineering. <p><b>YIMING LI, P<small>H</small>D,</b> is Full Professor of Electrical and Computer Engineering at National Chiao Tung University, Taiwan. He has been a Visiting Professor in Stanford University, Grenoble INP, and Tohoku University. He has published more than 300 technical articles in journals, conferences, and book chapters. Dr. Li is an active member of IEEE and has served on technical committees for many international professional conferences including IEDM. He is the recipient of the Pan Wen-Yuan Foundation's Research Fellowship Award and the Chinese Institute of Electrical Engineering's Outstanding Young Electrical Engineer Award. <p><b>KWOK K. NG, P<small>H</small>D,</b> is now serving on the Industry Advisory Board of the ECE Department of Wayne State University, USA, and as Adjunct Professor at National Chiao Tung University, Taiwan. He joined Bell Telephone Laboratories in 1980, and continued in its spin-offs Lucent Technologies and Agere Systems. He was with SRC (Semiconductor Research Corp.) from 2007 to 2019. Dr. Ng is an IEEE Life Fellow and former Editor of <i>IEEE Electron Device Letters</i>. He is author of numerous publications, including the book <i>Complete Guide to Semiconductor Devices.</i>
<p><b>The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices</b> <p>The Fourth Edition of <i>Physics of Semiconductor Devices</i> remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. <p>Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including <i>p–n</i> junctions, metal–semiconductor contacts, and metal–insulator–semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). The text then focuses on negative-resistance and power devices, and concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. The standard textbook and reference in the field of semiconductor devices, this classic volume: <ul> <li>Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices</li> <li>Offers completely updated and revised information that reflects advances in device concepts, performance, and applications</li> <li>Features new discussion of topics of increased contemporary interest such as the negative capacitance and tunneling field-effect transistors, 3-dimensional flash memories, GaN modulation-doped FETs, intermediate-band solar cells, and emitter turn-off thyristors</li> <li>Includes numerous problem sets, real-world examples, tables, figures, and illustrations, several useful appendices, and a detailed solutions manual</li> <li>Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors</li> </ul> <p><i>Physics of Semiconductor Devices, Fourth Edition</i> is an indispensable resource for device engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.

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