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INTRODUCTION<br /> 1. Nonpolar nitride materials and devices: Recent developments and present trends (T. Paskova)<br /> <br /> PART A: GROWTH<br /> 2. Nonpolar GaN films grown by HVPE (B. Haskell, P. Fini, S. Nakamura)<br /> 3. Nonpolar GaN quasi-wafers sliced from quasi-boules grown by high pressure solution and HVPE (I. Grzegory, M. Bochkowski, B. Lucnik, H. Teisseyre, C. Skierbiszewski, S. Porowski)<br /> 4. Heteroepitaxial growth of nonpolar AIN on SiC substrates by plasma-assisted molecular beam epitaxy (J. Suda)<br /> 5. MOVPE growth of AI(Ga, In)N on nonpolar/semipolar substrates (H. Amano)<br /> 6. GaN films and quantum wells with nonpolar surfaces: Growth and structural properties (O. Brandt)<br /> <br /> PART B: PROPERTIES<br /> 7. GaN films and quantum wells with nonpolar surfaces: Optical polarization properties (H. T. Grahn)<br /> 8. Luminescence properties of nonpolar GaN (P. P. Paskov, B. Monemar)<br /> 9. Optical phonons in GaN with nonpolar orientations: Anisotropic lattice distortion, phonon splitting, phonon deformation potentials and strain-free frequencies (V. Darakchieva, T. Paskova, M. Schubert)<br /> 10. Defects formed in nonpolar GaN grown on SiC and Al2O3: Structural perfection of laterally overgrown GaN layers (Z. Liliental-Weber, D. N. Zakharov)<br /> 11. Interfacial and defect structure of a-plane GaN grown on r-plane sapphire (R. Kroeger)<br /> <br /> PART C: NONPOLAR HETEROSTRUCTURES AND DEVICES<br /> 12. MOCVD grown nonpolar nitride heterostructures and devices (A. Chakraborty, U. Mishra)<br /> 13. MBE growth of nonpolar nitride low-dimensional structures (S. Founta, F. Rol, B. Gayral, B. Daudin)<br /> 14. Seminpolar InGaN/GaN quantum wells for highly functional light emitters (F. Funato, Y. Kowakami, Y. Narukawa, T. Mukai)<br />

Tanya Paskova has obtained her academic degrees from Sofia University, Bulgaria and Linköping University, Sweden. She held posts as a visiting lecturer and associate professor at Linköping University, focussing on development of GaN epitaxial growth for substrate applications and basic study of nitride materials and structures. Dr Paskova has authored more than 200 scientific papers, reviews, chapters, and invited talks at international forums and university seminars and is one of the editors of a book entitled 'Nitrides as seen by the Technology'. She is a referee for several prestigious physics journals and a member of PhD evaluation and workshop organization committees.

The field of research on Group III-Nitrides with nonpolar surfaces has developed significantly over the past five years. This is the first monograph to discuss in detail the present stage of development of nonpolar nitrides, with special emphasis on three main topics: crystal growth, properties, and device studies. World-class researchers have contributed to this book by summarizing their recent achievements in their respective fields of expertise.<br /> Nitrides with Nonpolar Surfaces traces the quest of utilizing the absence of polarization-induced electric fields in the nitride heterostructures with nonpolar surfaces for more efficient optoelectronic devices. Starting with growth optimizations, the understanding of new physical properties of nonpolar nitride materials led to significant improvement of material quality and device performance and to novel device concepts. Physical phenomena such as inherently present anisotropic in-plane strain and optical polarization anisotropy have been proposed to realize novel polarized light-emitting diodes, polarization-sensitive detectors and modulators.

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