Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth, Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth
Handbook of Nitride Semiconductors and Devices (VCH), Band 6 Volume 1
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Preface. Color Tables. 1 General Properties of Nitrides. Introduction. 1.1 Crystal Structure of Nitrides. 1.2 Gallium Nitride. 1.3 Aluminum Nitride. 1.4 Indium Nitride. 1.5 Ternary and Quaternary Alloys. References. 2 Electronic Band Structure and Polarization Effects. Introduction. 2.1 Band Structure Calculations. 2.2 General Strain Considerations. 2.3 Effect of Strain on the Band Structure of GaN. 2.4 kp Theory and the Quasi-Cubic Model. 2.5 Quasi-Cubic Approximation. 2.6 Temperature Dependence of Wurtzite GaN Bandgap. 2.7 Sphalerite (Zinc blende) GaN. 2.8 AlN. 2.9 InN. 2.10 Band Parameters for Dilute Nitrides. 2.11 Confined States. 2.12 Polarization Effects. References. 3 Growth and Growth Methods for Nitride Semiconductors. Introduction. 3.1 Substrates for Nitride Epitaxy. 3.2 A Primer on Conventional Substrates and their Preparation for Growth. 3.3 GaN Epitaxial Relationship to Substrates. 3.4 Nitride Growth Techniques. 3.5 The Art and Technology of Growth of Nitrides. 3.6 Concluding Remarks. References. 4 Extended and Point Defects, Doping, and Magnetism. Introduction. 4.1 A Primer on Extended Defects. 4.2 TEM Analysis of High Nitrogen Pressure (HNP) Solution Growth (HNPSG) and HVPE-Grown GaN. 4.3 Point Defects and Autodoping. 4.4 Defect Analysis by Deep-Level Transient Spectroscopy. 4.5 Minority Carrier Lifetime. 4.6 Positron Annihilation. 4.7 Fourier Transform Infrared (FTIR), Electron Paramagnetic Resonance, and Optical Detection of Magnetic Resonance. 4.8 Role of Hydrogen. 4.9 Intentional Doping. 4.10 Ion Implantation and Diffusion for Doping. 4.11 Summary. References. Index. Appendix.
Hadis Morkoç received his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoç has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoç is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They also deal with the properties and processes for thermal, optical and electrical systems, as well as magnetism and magnetic properties and spin-based device concepts. The result is a lucid presentation of the necessary basics of semiconductor and device physics and engineering, backed by an extensive reference section. Volume 1 covers the properties and growth of GaN, discussing the deposition methods hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. In addition, it reviews extended defects and their electrical nature, point defects, and doping.
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