Details

About the Author. <p>Preface.</p> <p>Acknowledgements.</p> <p>1. Electrostatics and Electrothermal Physics.</p> <p>2. Electrothermal and Methods of Analysis ESD Models.</p> <p>3. Semiconductor Device Physics and ESD.</p> <p>4. Substrates and ESD.</p> <p>5. Wells and Sub-collectors and ESD.</p> <p>6. Isolation Technology and ESD.</p> <p>7. Drain Engineering, Salicides and ESD.</p> <p>8. Dielectrics and ESD.</p> <p>9. Interconnects and ESD.</p> <p>10. Silicon on Insulator (SOI) and ESD.</p> <p>11. Silicon-Germanium and ESD.</p> <p>12. Nanostructures and ESD.</p> <p>Index.</p>

"…this is a good device book about ESD. Many useful equations are derived and explained." (<i>IEEE Circuits & Devices</i>, January/February 2006)

<b>Dr Steven H. Voldman</b> received his B.S. in Engineering Science from the University of Buffalo (1979); M.S. EE (1981) and Electrical Engineer Degree (1982) from M.I.T; MS Engineering Physics (1986) and Ph.D EE (1991) from the University of Vermont under IBM's Resident Study Fellow Program. At M.I.T, he worked as a member of the M.I.T. Plasma Fusion Center, and the High Voltage Research Laboratory (HVRL). At IBM, as a reliability device engineer, his work include pioneering work in bipolar/ CMOS SRAM alpha particle and cosmic ray SER simulation, MOSFET gate-induced drain leakage (GIDL) mechanism, hot electron, epitaxy/well design, CMOS latchup, and ESD. Since 1986, he has been responsible for defining the IBM ESD/latchup strategy for CMOS, SOI, BiCMOS and RF CMOS and SiGe technologies. He has authored ESD and latchup publications in the area of MOSFET Scaling, device simulations, copper, low-k, MR heads, CMOS, SOI , Sage and SiGeC technology. Voldman served as SEMATECH ESD Working Group Chairman (1996-2000), ESD Association General Chairman and Board of Directors, International  Reliability Physics (IRPS) ESD/Latchup Chairman, International Physical and Failure Analysis (IPFA) Symposium ESD Sub-Committee Chairman, ESD Association Standard Development Chairman on Transmission Line Pulse Testing, ESD Education  Committee, and serves on the ISQED Committee, Taiwan ED Conference (T-ESDC) Technical Program Committee. Voldman has provided ESD lectures for universities (e.g. MIT Lecture Series, Taiwan National Chiao-Tung University, and Singapore Nanyang Technical University). He is a recipient of over 125 US patents, over 100 publications, and also provides talks on patenting, and invention. He has been featured in <i>EE Times,</i> <i>Intellectual Property Law and Business</i> and authored the first article on ESD phenomena for the October 2002  edition of  <i>Scientific American</i> entitled <i>Lightening Rods for Nanostructures</i>, and <i>Pour La Science, Le Scienze, and Swiat Nauk</i> international editions. Dr. Voldman was recently accepted as the first IEEE Fellow for ESD phenomena in semiconductors for ' contributions to electrostatic discharge protection CMOS, SOI and SiGe technologies'.

In the continued quest to obtain a better understanding of Electrostatic Discharge (ESD), this book aims to provide a clear insight into how changes in semiconductor technology over the last 15 years have influenced the ESD robustness of semiconductor components. <i>ESD Physics and Devices</i> offers an accessible introduction to the subject covering thermal, mechanical and electrostatic phenomena as well as the techniques from physics and mathematics that are useful for electro-thermal and failure physics. <ul> <li>Addresses the physics of ESD protection in CMOS, silicon on insulator (SOI), and Silicon Germanium (SiGe), and future technologies from FinFETs to Carbon nano-tubes.</li> </ul> <ul> <li>Derives electro-thermal models from first principles highlighting early research, electro-thermal physical models and techniques.</li> </ul> <ul> <li>Introduces traditional and modern techniques to old problems in ESD, covering Boltzmann transforms and the Duhamel principle, as well as transmission line representations and transfer resistance models.</li> </ul> <i>ESD Physics and Devices</i> looks at the implications of ESD technology transitions for each physical region of a semiconductor device, region by region, from the substrate wafer to the interconnects. This book is a valuable reference for a range of advanced students, researchers and engineers in the fields of semiconductor process engineering, electrical engineering, materials science, mathematics and physics.

GB