Details
Wide Band Gap Semiconductor Nanowires 1
Low-Dimensionality Effects and Growth1. Aufl.
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154,99 € |
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| Verlag: | Wiley |
| Format: | EPUB |
| Veröffentl.: | 08.08.2014 |
| ISBN/EAN: | 9781118984307 |
| Sprache: | englisch |
| Anzahl Seiten: | 352 |
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Beschreibungen
<p>GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms<br />of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.</p>
<p>Preface xi</p> <p><b>Part 1 GaN and ZnO Nanowires: Low-Dimensionality Effects 1</b></p> <p>Chapter 1 Quantum and Optical Confinement 3<br /> <i>Le Si Dang</i></p> <p>Chapter 2 Stress Relaxation in Nanowires with Heterostructures 25<br /> <i>Frank Glas</i></p> <p>Chapter 3 Surface-Related Optical Properties of GaN-Based Nanowires 59<br /> <i>Pierre Lefebvre</i></p> <p>Chapter 4 Surface Related Optical Properties of ZnO Nanowires 81<br /> <i>Tobias Voss and Jürgen Gutowski</i></p> <p>Chapter 5 Doping and Transport 99<br /> <i>Julien Pernot, Fabrice Donatini and Pierre Tchoulfian</i></p> <p>Chapter 6 Microstructure of Group III-N Nanowires 125<br /> <i>Achim Trampert, Xiang Kong, Esperanza Luna, Javier Grandal and Bernd Jenichen</i></p> <p><b>Part 2 Nucleation and Growth Mechanisms of GaN and ZnO Nanowires 157</b></p> <p>Chapter 7 Ni Collector-Induced Growth of GaN Nanowire on C-Plane Sapphere by Plama-Assisted Molecular Beam Epitaxy 159<br /> <i>Caroline Chèze</i></p> <p>Chapter 8 Self-Induced Growth of GaN Nanowires by Molecular Beam Epitaxy 177<br /> <i>Vincent Consonni</i></p> <p>Chapter 9 Selective Area Growth of GaN Nanowires by Plama-Assisted Molecular Beam Epitaxy 215<br /> <i>Miguel A Sanchez-Garcia, steven Albert, Ana M. Bengoechea-Encabo, Francesca Barbagini and Enrique Calleja</i></p> <p>Chapter 10 Metal-Organic Vapor Phase Epitaxy Growth of GaN Nanorods 245<br /> <i>Joël Eymery</i></p> <p>Chapter 11 Metal-Organic Chemical Vaport Deposition Growth of ZnO Nanowires 265<br /> <i>Vincent Sallet</i></p> <p>Chapter 12 Pulsed-Laser Deposition of ZnO Nanowires 303<br /> <i>Christoph Peter Dietrich and Marius Grundmann</i></p> <p>Chapter 13 Preparation of ZnO Nanorods and Nanowires by Wet Chemistry 325<br /> <i>Thierry Pauporté</i></p> <p>List of Authors 379</p>
<p><b>Vincent Consonni</b> is Associate Scientist at CNRS (French National Center for Research) in France. His research has focused on the physics of crystal growth and of condensed matter for micro- and nano-structures involving compound semiconductors such as CdTe, GaN, ZnO and SnO2. He is currently working on transparent conductive materials and ZnO nanowire-based solar cells. He has published approximately 30 articles in peer-reviewed journals.</p> <p><b>Guy Feuillet</b> is Senior Scientist at CEA (French Atomic and Alternative Energy Commission), France. He has initiated and coordinated many internal programs (GaN nanostructures, X-ray detectors for medical imaging, solid state lighting) and R&D programs during his work at CEA. He is a permanent member of the scientific advisory board at CEA/LETI, and a member of the selection committee for the French National Agency for Research (ANR). He has published about 120 papers in peer-reviewed journals.</p>
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