Cover
Title Page
About the Authors
Preface
1 Introduction
1. 1.1 Micro/Nanotechnology
2. 1.2 Development of Micro/Nanoscale Measurements
3. References
2 Geometry Measurements at the Micro/Nanoscale
1. 2.1 Microvision Measurement
2. 2.2 3D Morphology Measurements in Contact Mode
3. 2.3 3D Morphology Optics Measurements with Non‐Contact Modes
4. 2.4 Micro/Nanoscale Tricoordinate Measurements
5. 2.5 Measurement of Film Thickness
6. References
3 Dynamic Measurements at the Micro/Nanoscale
1. 3.1 Stroboscopic Dynamic Vision Imaging
2. 3.2 Stroboscopic Microscopy Interference Measurements
3. 3.3 Laser Doppler Microscope Vibration Measurements
4. 3.4 Conclusion
5. References
4 Mechanical Characteristics Measurements
1. 4.1 Residual Stress Measurements of Microstructures
2. 4.2 Axial Tensile Measurement
3. 4.3 Nano‐Indentation Measurements Using Contact Dode
4. 4.4 Bend Method
5. 4.5 Resonance Method
6. 4.6 Stress Measurements Based on Raman Spectroscopy
7. 4.7 Bonding Strength Measurements
8. References
5 SPM for MEMS/NEMS Measurements
1. 5.1 Introduction
2. 5.2 Atomic Force Measurement
3. 5.3 Instruments
4. 5.4 Interferometer Detection Method
5. 5.5 Cantilever and Tip
6. 5.6 SPM System
7. 5.7 Applications of SFM in Micro/Nano Measurements
8. 5.8 Conclusion
9. References
6 MEMS Online Measurements
1. 6.1 Bulk Silicon Micromachining
2. 6.2 Surface Micromachining
3. 6.3 Polymer Materials Processing
4. 6.4 Conclusion
5. References
7 Typical Micro/Nanoscale Device Measurements
1. 7.1 MEMS Pressure Transducer Measurements
2. 7.2 MEMS Accelerator Measurements
3. 7.3 RF MEMS Testing Technology
4. 7.4 Micro/Nanoscale Devices for Infrared Measurement
5. 7.5 Typical NEMS Device Measurement
6. References
Index
End User License Agreement

List of Tables

Chapter 02
1. Table 2.1 Minimum wavelength though semiconductor material.
2. Table 2.2 GaAs parameters.
Chapter 03
1. Table 3.1 Amplitude‐Phase Measurements for Microresonator.
Chapter 04
1. Table 4.1 Indenter Geometric Parameters Used.
Chapter 05
1. Table 5.1 Overview of Scanning Probe Microscope Methods.
2. Table 5.2 The Amplitude of the Cantilever Dependence of the Ratio of V/I.
3. Table 5.3 Parameters of the Cantilever.
Chapter 06
1. Table 6.1 Specific Parameters of the Positioning Stage.
2. Table 6.2 Dimensional Parameters of the Structure in the Simulation.
3. Table 6.3 Optical and Physical Characteristics of Polymers.
4. Table 6.4 Performance Comparison of Etching Liquids.
5. Table 6.5 Fabrication Process for the PSPI Microvalve.
Chapter 07
1. Table 7.1 Principles and Characteristics of MEMS Pressure Sensors.
2. Table 7.2 Main Electrical Parameter Test for Wafer‐Level MEMS Pressure Sensors.
3. Table 7.3 Corollary of Standard Instruments and Equipment.
4. Table 7.4 Measurement Results.
5. Table 7.5 Overload Resistance Ability Testing Results.
6. Table 7.6 Parameters for the Mechanical‐Electrical Analogy.
7. Table 7.7 Resonator Parameters.
8. Table 7.8 Results of the Static Rollover Test.

List of Illustrations

Chapter 02
1. Figure 2.1 Schematic of a Microvision System.
2. Figure 2.2 Interface for our Micro/Nanoscale Testing Platform.
3. Figure 2.3 Measurement Using a Standard Grid.
4. Figure 2.4 Geometric Measurement Using an RF MEMS Device.
5. Figure 2.5 The Integrality Detection Interface of the System and Experimental Results for Micro/Nanostructures.
6. Figure 2.6 The Plane Dynamic Characteristics Panel and the Measurement Results for a MEMS Accelerometer.
7. Figure 2.7 Principles of an STM.
8. Figure 2.8 Single‐Tube Piezoelectric Ceramic Tube Pipe.
9. Figure 2.9 The Two Working Modes of STM.
10. Figure 2.10 The Principles of Laser Detection in AFM.
11. Figure 2.11 AFM Images.
12. Figure 2.12 Principles of Near‐Field Detection.
13. Figure 2.13 Diagram of the Overall Structure of an NSOM.
14. Figure 2.14 NSOM Tip–Sample Distance Control Modes.
15. Figure 2.15 Different NSOM Modes.
16. Figure 2.16 Schematic of the Principles of SEM.
17. Figure 2.17 The Structure of an SEM Lens Barrel.
18. Figure 2.18 Image of the FEI Tecnai Series SEM.
19. Figure 2.19 Light Path Diagram for TEM and TLM.
20. Figure 2.20 TEM Double Condenser System.
21. Figure 2.21 Diagram of a Self‐Focusing Laser Scanning Microscope. (a) Laser source, (b) incoming light, (c) objective lens, (d) sample, (f) half optical lens, (g) prism, (h) photoelectric devices, (k) controller, (l) computer, (m) display.
22. Figure 2.22 Diagram of a Confocal Laser Scanning Microscope. [6]
23. Figure 2.23 The Principles of White Light Interference.
24. Figure 2.24 The Principles of Infrared Interference Scanning.
25. Figure 2.25 Principles of a White Light Interference System. [11]
26. Figure 2.26 Photographs of a White Light Interference System Device Platform.
27. Figure 2.27 P‐622.ZCD Actuator and E‐625.CS Controller.
28. Figure 2.28 Diagram of the Principles of Refraction and Reflection of a Thin Film.
29. Figure 2.29 The Algorithm Procedure.
30. Figure 2.30 Automatic Interference Pattern Detection.
31. Figure 2.31 Main Interface of the Black and White CMOS.
32. Figure 2.32 InGaAs Infrared CCD Operating Interface.
33. Figure 2.33 Flowchart of the Interface Function Implementation.
34. Figure 2.34 Diagram of the Interface Function Implementation.
35. Figure 2.35 GaAs Sample Section Steps.
36. Figure 2.36 SEM Images of GaAs Sample Section Steps.
37. Figure 2.37 Sample Topography Obtained From the CMOS Interference Pattern.
38. Figure 2.38 3D Topography and Section Height Map.
39. Figure 2.39 Results From InGaAs Infrared CCD Interference.
40. Figure 2.40 3D Topography and Section Height Maps.
41. Figure 2.41 InGaAs Infrared CCD Projection Interference of Sample 2.
42. Figure 2.42 3D Topography of Internal Infrared Transmission and Section Height Map.
43. Figure 2.43 3D Topography of Infrared Internal Compensation (Using GaAs) and Section Height Map.
44. Figure 2.44 3D Topography of Infrared Internal Compensation Internal (using Si) and Section Height Map.
45. Figure 2.45 Diagram of a Typical Coordinate Measuring Instrument.
46. Figure 2.46 The working methods of the system. [18]
47. Figure 2.47 Bridge Method for Measuring the Resistivity of Thin Films. V is the measured membrane, U is the voltage, O is the balance indicator, and R₁, R₂, and R₃ are the resistors.
48. Figure 2.48 Schematic of Equipment.
49. Figure 2.49 Orientation of Fast Axis of the Quarter Wave Plate.
50. Figure 2.50 Orientation of Non‐Opaque Axis of Analyzer.
Chapter 03
1. Figure 3.1 The Blurred Image of a Movable MEMS Device.
2. Figure 3.2 Image of a Movable MEMS Device.
3. Figure 3.3 Block Diagram of Static and Dynamic Measurement Processes for Micro/Nanostructures.
4. Figure 3.4 Photograph of Static and Dynamic Measurement System for Micro/Nanostructures.
5. Figure 3.5 Photographs of Key Hardware Modules.
6. Figure 3.6 Estimation Diagram for Block‐Matching Motion.
7. Figure 3.7 Microresonator Photograph and Selected ROI Areas.
8. Figure 3.8 Motion Range Dependence of the Movement Phase for the Microresonator.
9. Figure 3.9 Schematic of a Strobe Microscopic Visual Measurement System.
10. Figure 3.10 The Optical System After Optimization. 1. Light source; 2. polarizer (polarizing plate); 3. 1/2 wave plate; 4. collimator lens; 5. focus lens; 6. turning mirror; 7. polarization splitting prism; 8. 1/4 wave plate; 9. microscope objective lens; 10. measured micro device; 11. tune platform; 12. 1/4 wave plate; 13. objective lens; 14. shielding barrier; 15. reference plane mirror; 16. phase shifter; 17. imaging lens; 18. analyzer; 19. image acquisition device.
11. Figure 3.11 The Adjusting Light Path Shelf.
12. Figure 3.12 The Optical Path Hardware Structure After Optimization.
13. Figure 3.13 Software Technology Processes.
14. Figure 3.14 Measurement of the Speed Structure of a Single Optical Path.
15. Figure 3.15 Schematic of a Laser Torsional Vibration System.
16. Figure 3.16 The Movement of Any Point on the Shaft.
17. Figure 3.17 Diagram of Laser Vibration Instrument and Shaft Angle.
18. Figure 3.18 Diagram of Doppler‐Based Laser Torsional Vibration Measurement Using Two Lasers.
19. Figure 3.19 Diagram of Laser Doppler Flutter Measurement Setup and Optical Path.
20. Figure 3.20 Schematic of Normal Elasticity Factor Using Force‐Shifting Measurement.
21. Figure 3.21 Schematic of the Reference Cantilever Probe.
22. Figure 3.22 AFM Setup with Movable Microstage.
23. Figure 3.23 Operating Interface and its Functions.
24. Figure 3.24 Deflection Measurement Results.
25. Figure 3.25 The Force Curve of a Cantilever with Spring Constant of 0.06 N/m on the Hard Basement.
Chapter 04
1. Figure 4.1 X‐ray Diffraction of a Crystal Face.
2. Figure 4.2 Schematic of a Cantilever Oscillation Frequency Measuring System.
3. Figure 4.3 Diagram of microrotational structure method setup. [4]
4. Figure 4.4 Diagram of Microrotational Structure Method Setup. [4]
5. Figure 4.5 Schematic of Read and the Electronic Speckle Optical Path. [5]
6. Figure 4.6 Greek’s Testing Device. [6]
7. Figure 4.7 Diagram of Tsuchiya’s Sample Holder and Test Device. [6]
8. Figure 4.8 Diagram of the Testing Device. [6]
9. Figure 4.9 Diagram of Microstretching Testing Device. [6]
10. Figure 4.10 Schematic of Ogawa’s Testing Device. [6]
11. Figure 4.11 Schematic of Wen Shizhu’s Electromagnetic Testing Device. [6]
12. Figure 4.12 Schematic of Cu Jinkui’s Microconstruction Member and Slice Stretching Device. [7]
13. Figure 4.13 Diagram of the Aluminum Microring. [8]
14. Figure 4.14 Schematic of Yoshioka’s Integrated Sample and Associated Structure. [5]
15. Figure 4.15 Yong. [9]
16. Figure 4.16 Diagram of the Use of Interference Strain Gauge to Measure Strain.
17. Figure 4.17 The Geometrical Shape and Character Parameters of the Berkovich Tip.
18. Figure 4.18 Measuring with a Berkovich Tip.
19. Figure 4.19 Understanding and Defining the Concept of an Equivalent Tip.
20. Figure 4.20 Graph Illustrating Indentation Creep.
21. Figure 4.21 Diagram of Pushing Relaxation.
22. Figure 4.22 Diagram of Plastic and Elastic Work During the Indentation Process.
23. Figure 4.23 Flaw Produced by Cube Corner Tip.
24. Figure 4.24 Microcantilever Bending Contacting Experiment. [4]
25. Figure 4.25 Real Time Measurement System of a Tympanic Membrane. [4]
26. Figure 4.26 Integrated Fracture Testing Device. [8]
27. Figure 4.27 Diagram of Beam Bending.
28. Figure 4.28 (a) Diagram of Beam Crack Tip (b) Stress Analysis of a Point Near the Crack.
29. Figure 4.29 Schematic of a Microbridge Vibration Experiment.
30. Figure 4.30 Raman Scattering Process.
31. Figure 4.31 Renishaw Raman Spectroscopy Equipment.
32. Figure 4.32 Raman Spectroscopy Stress Testing Device.
33. Figure 4.33 Micro‐Accelerometer Used for Testing.
34. Figure 4.34 Diagram of the Stress Test Position.
35. Figure 4.35 The Raman Scattered Frequency Shift of the Edge of a Microcantilever, as a Function of Location.
36. Figure 4.36 The Raman Scattered Frequency Shift of the Middle of a Microcantilever, as a Function of Location.
37. Figure 4.37 The Raman Scattered Frequency Shift of the Edge of a Microbeam, as a Function of Location.
38. Figure 4.38 The Raman Scattered Frequency Shift From the Middle of a Microbeam, as a Function of Location.
39. Figure 4.39 Microresonator Used for Testing.
40. Figure 4.40 Location Map for Single Point Measuring.
41. Figure 4.41 Stresses of Single Point Test.
42. Figure 4.42 Measurement Locations at the Edges of the Microresonator.
43. Figure 4.43 Stress Distribution Plot of the X1 Line.
44. Figure 4.44 Stress Distribution Plot of the X3 Line.
45. Figure 4.45 Stress Distribution Plot of the X5 Line.
46. Figure 4.46 Stress Distribution Plot of the X4 Line.
47. Figure 4.47 Lateral Stress Distribution Plot for the Resonator.
48. Figure 4.48 Diagram of the Laser Modulation Principle.
49. Figure 4.49 The Raman Spectra for Standard Silicon for 10 kHz and 20 kHz Modulation Frequencies.
50. Figure 4.50 Raman Spectra Stress Analysis on a Database of Materials.
51. Figure 4.51 Processing Interface of the Stress Analysis.
52. Figure 4.52 Diagram of the Blade Insertion Method.
53. Figure 4.53 Details of the Static Liquid Pressure Method.
54. Figure 4.54 Schematic of the Hierarchical Four‐Point Bending Method.
55. Figure 4.55 Diagram of the MC Testing Method.
56. Figure 4.56 Two Types of Czochralski Methods.
57. Figure 4.57 Diagram of a torsion or shear test.
58. Figure 4.58 Schematic for Non‐Destructive Testing Based on Acoustic Technology.
59. Figure 4.59 Diagram of the Particle Method.
60. Figure 4.60 Bonding Strength Testing System.
61. Figure 4.61 Diagram of the Control System.
62. Figure 4.62 Alignment of Cutting Tools and Silicon Wafer.
63. Figure 4.63 Principles of Measuring the Crack Length.
64. Figure 4.64 The Si Bonding Strength Testing System.
65. Figure 4.65 Crack Formation.
66. Figure 4.66 Image of the Preparation
67. Figure 4.67 Image of the Bonding Crack after of the Si Wafer Bonding Cracks. High Temperature Annealing.
68. Figure 4.68 Crack Length and Blade Insertion Depth Curve.
Chapter 05
1. Figure 5.1 Schematic of the Operating Principles of an AFM Using an Optical Beam Deflection Method with a Cantilever Probe and Beam Deflection.
2. Figure 5.2 Schematic of the Surface Forces as a Function of Distance, and Their Relation to the Different AFM Operation Modes.
3. Figure 5.3 Schematic of FM‐AFM Detection Methods.
4. Figure 5.4 Top View of the AFM Unit.
5. Figure 5.5 Photograph of the Fiber Stage.
6. Figure 5.6 Inertia‐Driven Coarse Approach for the Sample Stage and Operating Principles of the Stick–Slip Actuation System; (a) Stick–Slip Equipment; (b) The Stage Displacement Dependence of the Applied Voltage.
7. Figure 5.7 Schematic of the Tube Scanner.
8. Figure 5.8 Actuation and Sensing in the z and x Direction of the Piezoelectric Tube.
9. Figure 5.9 Side View of the Vibration Isolation System in the Observation Chamber.
10. Figure 5.10 Optical Interference. (a) Alignment Position Between the Cantilever and the Optical Fiber; (b) Interference Intensity Dependence on the Distance.
11. Figure 5.11 Fiber Interferometer. (a) Diagram of the Optical Fiber Interferometer. (b) Optical Interference Between Reflected Light from the Fiber Edge and the Back of the Cantilever.
12. Figure 5.12 (a) Needle Sensor. (b) qPlus Sensor. (c) SEM Image of an Array of Heater‐Integrated Cantilevers.
13. Figure 5.13 TEM Image of a Micromachined Silicon Cantilever with a Tip Pointing in the [001] Crystal Direction.
14. Figure 5.14 Block Diagram of the Frequency Modulation AFM Feedback Loop for Constant Amplitude Control and Frequency‐Shift Measurements. Three Physical Observables are Available: the Frequency Shift, the Damping Signal, and the (Average) Tunneling Current.
15. Figure 5.15 (a) Scan Direction with Respect to the Features. (b) AFM Tip Tilted by ϑx = 45° Imaging a Feature Sidewall on a Sample (the Features and the Tip are Not Given at the Same Scale).
16. Figure 5.16 Cross‐Section SEM Images of Patterns After (a) Lithography, (b) Si‐ARC Etching, (c) SOC Etching, (d) Si Etching, and (e) SOC Stripping.
17. Figure 5.17 Schematic Diagram Showing the Construction of an Assembled Cantilever Probe (ACP) (a) and a SEM Image Taken on a Realized ACP (b).
18. Figure 5.18 ACP Applied for Measurements of Microgears. Tip t_a Measures the Sidewall of the Gear Tooth, Whereas tip t_b Measures the Upper Surface of the Gear.
19. Figure 5.19 (a)–(d). Results of As‐Deposited Neutral, Square Planar Molecules, Which Become Negatively Charged and Tetrahedral After Switching.
20. Figure 5.20 Step Height Standard of Nominal 1 μm Step Measured by SFM in a Range of 60 μm × 10 μm (PTB).
21. Figure 5.21 SFM Image of a Nanoroughness Standard Fabricated by Nanogrinding. The zize of the observed Area is Approximately 72 μm × 70 μm; the Vertical Range is 80 nm. The Roughness Parameter S_a ~ 8.5 nm.
22. Figure 5.22 Classification of Atomic Manipulation Modes Demonstrated by SPM. (a) Vertical Atom Manipulation. (b) Lateral Atom Manipulation.
23. Figure 5.23 Lateral Manipulation Modes Using AFM. (a) Pulling Mode; (b) Sliding Mode; and (c) Pushing Mode.
24. Figure 5.24 Logic AND gate. (A) Model of the AND gate. Large dots with arrows indicate CO molecules that hop during device operation, and small dots indicate positions after hopping. Both input cascades (left) have to be triggered to set up a chevron in the center, which then triggers the output cascade. (B to D) Sequence of STM images (5.1 nm × 3.4 nm) showing the operation of the AND gate (I = 0.2 nA; V = 10 mV). (B) Initial configuration. (C) Result after input X was triggered manually by moving the top left CO molecule with the STM tip. (D) When input Y was triggered, the cascade propagated all the way to the output. (E) The result of manually resetting all CO molecules to the initial configuration of (B), and then manually triggering input Y. Subsequently triggering input X yielded configuration (D). [78]
25. Figure 5.25 Two‐input sorter. (A) Model of the sorter, which computes the logic OR and logic AND of the two inputs. Color scheme is as in Fig 5.24. The bars indicate hops that occurred when input X was triggered. The sorter consists of several components interconnected by linked‐chevron cascades.
Chapter 06
1. Figure 6.1 Structure Diagram of Fusion Bonding Process. [1]
2. Figure 6.2 Photograph of a Packaged xy‐Stage.
3. Figure 6.3 SEM Images of Parts of the xy‐Positioning Stage.
4. Figure 6.4 Illustration of the Microstage Fabrication Process.
5. Figure 6.5 Photograph of the Backside Releasing Structure.
6. Figure 6.6 Photograph of the Reverse of the Releasing Structure.
7. Figure 6.7 Images of the Surface of the Releasing Structure After DRIE Processing.
8. Figure 6.8 SEM Image of the Nanopositioning Stage.
9. Figure 6.9 Flowchart for Fabrication Process of Piezoresistor in Plane.
10. Figure 6.10 Top view of Thin Film Polysilicon Thermal Conductivity Test.
11. Figure 6.11 Cross‐Section of Thin Film Polysilicon Thermal Conductivity Test.
12. Figure 6.12 Schematic of the Heat Transfer Model for a Cantilever (top view).
13. Figure 6.13 Schematic of the Heat Transfer Model for Comb Beam (top view).
14. Figure 6.14 Heating Power Dependence of the Temperature Gradient with Different Air Thickness for Sample 1.
15. Figure 6.15 Heating Power Dependence of the Temperature Gradient with Different Air Thickness for Sample 2.
16. Figure 6.16 Heating Power and Temperature Gradient Dependence of the Air Layer Thickness for Samples 1 and 2.
17. Figure 6.17 Comparison of Thermal Conductivities From Experiment and Simulation.
18. Figure 6.18 Monomeric Units of PI, PBI, and PMMA.
19. Figure 6.19 Passive Unidirectional Valve From Novel Materials. [8]
20. Figure 6.20 Unidirectional PSPI Valve. [8]
21. Figure 6.21 Schematic for the PSPI Microvalve Processing.
22. Figure 6.22 Photos of the PSPI Microvalve.
Chapter 07
1. Figure 7.1 A Block Diagram for a Piezoresistive Pressure Sensor.
2. Figure 7.2 Schematic of a Silicon Piezoresistive Pressure Sensor.
3. Figure 7.3 Diagram of a Wheatstone Bridge.
4. Figure 7.4 Parallel Plate Capacitor.
5. Figure 7.5 Differential Capacitance Sensor: 1) Moving Electrode 2) Glass Wafer (Fixed Electrode) 3) Binding Post 4) Filter 5) Protection Ring.
6. Figure 7.6 Schematic of Piezoelectric Pressure Sensor. [3]
7. Figure 7.7 Schematic of a Resonant Pressure Sensor.
8. Figure 7.8 Block Diagram of a Wafer‐Level Testing and Selection System.
9. Figure 7.9 Software Interface for the Wafer‐Level Testing System for Pressure Sensors.
10. Figure 7.10 Wafer‐Level Test Results for PS1500 (lower panel) and PS500 (upper panel) Sensors.
11. Figure 7.11 Wafer‐Level Test for PS1500 (lower panel) and PS500 (upper panel) Pressure Sensors.
12. Figure 7.12 Static Characteristics of Sensor.
13. Figure 7.13 Three Types of Linearization for Non‐Linear Output/Input.
14. Figure 7.14 Hysteresis Characteristics of the Sensor.
15. Figure 7.15 Repeatability of the Sensor.
16. Figure 7.16 Schematic of the Dividing Head Test Method for the Static Characteristics of Acceleration Sensors. [21, 22]
17. Figure 7.17 Schematic of a Precision Centrifuge.
18. Figure 7.18 Installation Schematic for Acceleration Sensors.
19. Figure 7.19 Diagram of the Vibration Table Experiment for Accelerator Sensors.
20. Figure 7.20 Schematic Diagram of the Impact Hammer Experiment.
21. Figure 7.21 Diagram of the Impact Comparison Method for Frequency Characteristics.
22. Figure 7.22 The Output of the Two Sensors.
23. Figure 7.23 The Measured Frequency Response of the Accelerator Sensor.
24. Figure 7.24 Schematic of Hopkinson Bar Experiment.
25. Figure 7.25 Photograph of Hopkinson Equipment and the Sensors.
26. Figure 7.26 Experimental Results of the Output Signal (b) Under (a) Conditions.
27. Figure 7.27 Schematic of Fixed Beam Capacitive Resonator.
28. Figure 7.28 SEM Image of a Clamped‐Clamped Beam Capacitance Resonator.
29. Figure 7.29 Equivalent Circuit of a Single Port Resonator.
30. Figure 7.30 Equivalent Resonator Circuit with Parasitic Parameters.
31. Figure 7.31 Simulation Results According to the Resonator Equivalent Circuit.
32. Figure 7.32 Influence of Substrate Coupling Capacitor on Detecting Signals.
33. Figure 7.33 Influence of Stray Capacitance C_p on the Experimental Results.
34. Figure 7.34 Parasitic Resistance Influence on the Experimental Results.
35. Figure 7.35 Schematic Diagram of the Resonant Test System.
36. Figure 7.36 Results of the Resonator Test.
37. Figure 7.37 Schematic of the Working Principles of an Infrared Imaging System.
38. Figure 7.38 Diagram of Knife‐Edge Filtering Optical Readout Equipment.
39. Figure 7.39 Thermal Image of the FPA Using Sacrificial Layer Technology.
40. Figure 7.40 Infrared Thermal Image of a Human Hand at Room Temperature.
41. Figure 7.41 Infrared Thermal Image of a Human Head at Room Temperature.
42. Figure 7.42 Thermal Images Using Different Sizes of FPA.
43. Figure 7.43 Thermal Image of a Hand Using the Variable Aperture Filter Method.
44. Figure 7.44 Thermal Image of a Human Body Using the Variable Aperture Filter Method.
45. Figure 7.45 The Chip and Package Header of a NEMS Acceleration Sensor.
46. Figure 7.46 Schematic of the Light Path Circuit.
47. Figure 7.47 Blocks of Driven and Detection for a Sensitive Meter Header.
48. Figure 7.48 A Laser, Photoelectric Detectors, and Diffraction Spots.
49. Figure 7.49 First Diffraction Light Intensity Dependence on the Driven Voltage.
50. Figure 7.50 First Diffraction Light Intensity Dependence of the Bias Voltage.
51. Figure 7.51 Acceleration as a Function of the Output of the Accelerator.
52. Figure 7.52 Raw and Fitted Linear Interval Data.
53. Figure 7.53 Frequency Response Curve.
54. Figure 7.54 Power Spectral Density of the Accelerator.
55. Figure 7.55 Schematic of the Underwater Acoustic Sensor.
56. Figure 7.56 Diagram of the Rigid Cylindrical Acoustic Scattering.
57. Figure 7.57 Encapsulation Structure of the NEMS Acoustic Sensor.
58. Figure 7.58 Photograph of the NEMS Acoustic Sensor.
59. Figure 7.59 Vector Hydrophone Calibration System.
60. Figure 7.60 Diagram of the Calibration Equipment.
61. Figure 7.61 Block Diagram of the Sensitivity Measurement.
62. Figure 7.62 Frequency Response Curve of the Mechanical and Electrical Acoustic Sensor.
63. Figure 7.63 Directivity of the Acoustic Sensor Under a Definite Frequency.

Preface

--The rapid development of Micro/nanometer manufacturing--

Performance of micro/nano devices requires a great deal of precision. The scale and quality of these devices can be improved greatly by bringing an efficient method of manufacturing. Micro/nano devicesare high-integrated and complicated structures that involve an equal proportion of high aspect ratio, multilayer or stereo or moved micro/nano structure etc. In this book we have investigated and discussed about the novel mechanism and multi-domain coupling effect of micro/nano devices.

There is an increasing challenge, especially in the technique of measurement of micro/nano devices confines the development of the micro/nano manufacturing science and technology. On the other hand, the measurement techniques available have many defects which further restricts its application in the system. Therefore, developing and characterizing new methods of measurement technology on the basis of novel measurement principles play a pivotal role in promoting the development of traditional and high-tech industry and also plays a strategic role in national security.

The measurement techniques at the micro/nano scale involve effects like, the scale effect, the surface and interface effects and the usage and manufacturing process of the devices must be considered both theoretically and experimentally. Consequently, this technique of measurement at the micro/nano scale is the basis of micro-electro-mechanical system/nano-electro-mechanical system (MEMS/NEMS). It is also the important method for evaluating the manufacturing process, high precision control system, and operation of micro/nano devices at the micro/nano scale qualitatively and quantitatively.

This research is funded by the The National High Technology Research and Development Program of China and The National Natural Science Foundation of China. This book summarizes the achievements and presents recent progresses in the field of MEMS/ NEMS. We introduce and explain the principles, method of morphology, test representation, the dynamic characteristics of micro/nanometer devices and online measuring method of MEMS/NEMS. This book provides important information on MEMS/NEMS and can be used as a handbook for the graduate students and experts focused in micro/nanometer devices technology research. The purpose of writing this book is to nurture the researchers with the basic knowledge of measuring technology systematically and comprehensively, and also to provide a platform to a new comer for developing micro/nano devices.

This book consists of 7 chapters which introduce a comprehensive and systematical variety of technique for measurement of micro/nano devices theoretically and experimentally based on achievements collaborated on many projects over the years. After an introduction of micro-nano measurement technology in Chapter 1 (by Wendong Zhang (North University of China, NUC), Chenyang Xue (NUC), Xiujian Chou (NUC), Faifei Bao (Chinese academy of sciences, Shanghai micro system and information technology research, SHMSITR, CAS)), we explain the geometry measurement technology at micro/nano scale in Chapter 2. Chapter 3 written by Xiujian Chou (NUC), Dachao Li (Tianjin University, TJU), and Haifei Bao provides a thorough presentation of dynamic measurement technology at micro/nano scale. Chapter 4 summarized by Liguo Chen (Harbin Institute of Technology, HIT) and Jing Chen (Peking University, PKU) describes the mechanical characteristics measurement technology of the MEMS/NEMS. Chapter 5 (by Zongmin Ma) shows the advances in scanning probe microscopy (SPM) (especially for the atomic force microscopy, AFM) for the MEMS/NEMS measurements. Chapter 6 also by Jing Chen (PKU) investigates the applications of online measurement technology for MEMS/NEMS. Wendong Zhang (NUC) and Xiujian Chou describe the application of technique of measurement in typical micro/nano devices in Chapter 7.

I would like to thank all the authors and my colleagues for their contributions to this book. I also extend my gratitude to the Press for their fruitful collaboration. It is hoped that this book will accelerate the technique of measurement of micro/nano scale in MEMS/NEMS field and also brings rapid and continuing growth which will stimulate further efforts to develop MEMS/NEMS devices based on mechanical methods.

Wendong Zhang
North University of China, NUC
Taiyuan, China