This edition first published 2017
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Library of Congress Cataloging-in-Publication Data
Names: Kumar, Mamidala Jagadesh, author. | Vishnoi, Rajat, author. | Pandey, Pratyush, author.
Title: Tunnel field-effect transistors (TFET) : modelling and simulations / Jagadesh Kumar Mamidala, Rajat Vishnoi and Pratyush Pandey.
Description: 1 | Hoboken : Wiley, 2016. | Includes bibliographical references and index.
Identifiers: LCCN 2016023165 (print) | LCCN 2016041464 (ebook) | ISBN 9781119246299 (hardback) | ISBN 9781119246282 (pdf) | ISBN 9781119246305 (epub)
Subjects: LCSH: Tunnel field-effect transistors. | Integrated circuits-Design and construction. | Nanostructured materials. | Low voltage integrated circuits. | BISAC: TECHNOLOGY & ENGINEERING / Electronics / Semiconductors.
Classification: LCC TK7871.95 .K86 2016 (print) | LCC TK7871.95 (ebook) | DDC 621.3815/284–dc23
LC record available at https://lccn.loc.gov/2016023165
A catalogue record for this book is available from the British Library.
Just as a human body is made up of millions of biological cells, an integrated circuit is made up of millions of transistors. Transistors are the basic building blocks of all modern electronic gadgets. Ever since the advent of CMOS circuits, the dimensions of the transistor have been continuously scaled down in order to pack more logic on to a silicon wafer and also to reduce power consumption in the circuits. In recent years, with mobile devices becoming popular, the search for low power devices with steep switching characteristics has become important. Highly scaled MOSFETs are rendered unsuitable for low power applications due to a thermal limit on their switching. Hence, the Tunnel Field Effect Transistor (TFET) is being explored extensively for low power applications. A TFET has a steep switching characteristic as it works on the phenomena of band-to-band tunnelling. Over the past few years, TFETs have been heavily researched by various notable groups in the field of semiconductor devices across the globe.
This book provides a comprehensive guide for those who are beginning their study on TFETs and also as a guide for those who wish to design integrated circuits based on TFETs. The book covers the essential physics behind the functioning of the TFETs and also the device modelling of TFETs, for the purpose of circuit design and simulation. It begins with studying the basic principles of quantum mechanics and then builds up to the physics behind the quantum mechanical phenomena of band-to-band tunnelling. This is followed by studying the basic functioning of TFETs and their different structural configurations. After explaining the functioning of TFETs, the book describes different approaches used by researchers for developing the drain current models for TFETs. Finally, to help new researchers in the field of TFETs, the book describes the process of carrying out numerical simulations of TFETs using the TCAD tool Silvaco ATLAS. Numerical simulations are helpful tools for studying the behaviour of any semiconductor device without getting into the complex process of fabrication and characterisation.
This book is the first comprehensive literature on TFETs, which are very popular transistors and have been extensively studied in recent years; they are going to be important building blocks for low power solid state circuits in the future. It is a one-stop volume for studying TFETs for someone who has a basic knowledge of MOSFET physics. It covers the physics behind the phenomena of tunnelling as well as the device physics of TFETs. It also has a unique feature of describing device simulation along with device physics so as to enable readers to do further research on TFETs.
The presentation of the book is clear and accurate and is written in simple language. The book endeavours to explain different phenomena in the TFETs using simple and logical explanations so as to enable the reader to get a real feel for the functioning of the device. Also, each and every aspect of the TFET has been compared to that of the MOSFET so that the facts presented in the book make more sense to the entire semiconductor device fraternity and help in the integration of the TFET with the prevailing technology in the industry. The book also attempts to cover all the recent research articles published on TFETs so as to make sure that, along with covering the basics, it also covers state of the art work on TFETs.