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Cover
List of Contributors
Series Preface
1. Wiley Series in Materials for Electronic and Optoelectronic Applications
Preface
1 Fundamental Optical Properties of Materials I
1. 1.1 Introduction
2. 1.2 Optical Constants n and K
3. 1.3 Refractive Index and Dispersion
4. 1.4 The Swanepoel Technique: Measurement of n and α for Thin Films on Substrates
5. 1.5 Transmittance and Reflectance of a Partially Transparent Plate
6. 1.6 Optical Properties and Diffuse Reflection: Schuster–Kubelka–Munk Theory
7. 1.7 Conclusions
8. Acknowledgments
9. References
2 Fundamental Optical Properties of Materials II
1. 2.1 Introduction
2. 2.2 Lattice or Reststrahlen Absorption and Infrared Reflection
3. 2.3 Free Carrier Absorption (FCA)
4. 2.4 Band‐to‐Band or Fundamental Absorption (Crystalline Solids)
5. 2.5 Impurity Absorption and Rare‐Earth Ions
6. 2.6 Effect of External Fields
7. 2.7 Effective Medium Approximations
8. 2.8 Conclusions
9. Acknowledgments
10. References
3 Optical Properties of Disordered Condensed Matter
1. 3.1 Introduction
2. 3.2 Fundamental Optical Absorption (Experimental)
3. 3.3 Absorption Coefficient (Theory)
4. 3.4 Compositional Variation of the Optical Bandgap
5. 3.5 Conclusions
6. References
4 Optical Properties of Glasses
1. 4.1 Introduction
2. 4.2 The Refractive Index
3. 4.3 Glass Interfaces
4. 4.4 Dispersion
5. 4.5 Sensitivity of the Refractive Index
6. 4.6 Glass Color
7. 4.7 Fluorescence in Rare‐Earth‐Doped Glass
8. 4.8 Glasses for Fiber Optics
9. 4.9 Refractive Index Engineering
10. 4.10 Glass and Glass–Fiber Lasers and Amplifiers
11. 4.11 Valence Change Glasses
12. 4.12 Transparent Glass Ceramics
13. 4.13 Conclusions
14. References
5 Concept of Excitons
1. 5.1 Introduction
2. 5.2 Excitons in Crystalline Solids
3. 5.3 Excitons in Amorphous Semiconductors
4. 5.4 Excitons in Organic Semiconductors
5. 5.5 Conclusions
6. References
6 Photoluminescence
1. 6.1 Introduction
2. 6.2 Fundamental Aspects of Photoluminescence (PL) in Materials
3. 6.3 Experimental Aspects
4. 6.4 Photoluminescence Lifetime Spectroscopy of Amorphous Semiconductors by QFRS Technique
5. 6.5 QFRS on Up‐Conversion Photoluminescence (UCPL) of RE‐Doped Materials
6. 6.6 Conclusions
7. Acknowledgments
8. References
7 Photoluminescence, Photoinduced Changes, and Electroluminescence in Noncrystalline Semiconductors
1. 7.1 Introduction
2. 7.2 Photoluminescence
3. 7.3 Photoinduced Changes in Amorphous Chalcogenides
4. 7.4 Radiative Recombination of Excitons in Organic Semiconductors
5. 7.5 Conclusions
6. Acknowledgments
7. References
8 Photoinduced Bond Breaking and Volume Change in Chalcogenide Glasses
1. 8.1 Introduction
2. 8.2 Atomic‐Scale Computer Simulations of Photoinduced Volume Changes
3. 8.3 Effect of Illumination
4. 8.4 Kinetics of Volume Change
5. 8.5 Additional Remarks
6. 8.6 Conclusions
7. References
9 Properties and Applications of Photonic Crystals
1. 9.1 Introduction
2. 9.2 PC Overview
3. 9.3 Tunable PCs
4. 9.4 Selected Applications of PC
5. 9.5 Conclusions
6. Acknowledgments
7. References
10 Nonlinear Optical Properties of Photonic Glasses
1. 10.1 Introduction
2. 10.2 Photonic Glass
3. 10.3 Nonlinear Absorption and Refractivity
4. 10.4 Nonlinear Excitation‐Induced Structural Changes
5. 10.5 Conclusions
6. Appendix Addendum: Perspectives on Optical Devices
7. References
11 Optical Properties of Organic Semiconductors
1. 11.1 Introduction
2. 11.2 Molecular Structure of π‐Conjugated Polymers
3. 11.3 Theoretical Models
4. 11.4 Absorption Spectrum
5. 11.5 Photoluminescence
6. 11.6 Non‐Emissive Excited States
7. 11.7 Electron–Electron Interaction
8. 11.8 Interchain Interaction
9. 11.9 Conclusions
10. References
12 Organic Semiconductors and Applications
1. 12.1 Introduction
2. 12.2 Anode Modification for Enhanced OLED Performance
3. 12.3 Flexible OLEDs
4. 12.4 Solution‐Processable High‐Performing OLEDs
5. 12.5 Conclusions
6. References
13 Transparent White OLEDs
1. 13.1 Introduction—Progress in Transparent WOLEDs
2. 13.2 Performance of WOLEDs
3. 13.3 Emission Behavior of Transparent WOLEDs
4. 13.4 Conclusions
5. References
14 Optical Properties of Thin Films
1. 14.1 Introduction
2. 14.2 Optics of Thin Films
3. 14.3 Reflection‐Transmission Photoellipsometry for Determination of Optical Constants
4. 14.4 Application of Thin Films to Energy Management and Renewable‐Energy Technologies
5. 14.5 Application of Tunable Thin Films to Phase and Polarization Modulation
6. 14.6 Conclusions
7. References
15 Optical Characterization of Materials by Spectroscopic Ellipsometry
1. 15.1 Introduction
2. 15.2 Notions of Light Polarization
3. 15.3 Measureable Quantities
4. 15.4 Instrumentation
5. 15.5 Single Interface
6. 15.6 Single Layer
7. 15.7 Multilayer
8. 15.8 Linear Grating
9. 15.9 Conclusions
10. Acknowledgments
11. References
16 Excitonic Processes in Quantum Wells
1. 16.1 Introduction
2. 16.2 Exciton–Phonon Interaction
3. 16.3 Exciton Formation in QWs Assisted by Phonons
4. 16.4 Nonradiative Relaxation of Free Excitons
5. 16.5 Quasi‐2D Free‐Exciton Linewidth
6. 16.6 Localization of Free Excitons
7. 16.7 Conclusions
8. References
17 Optoelectronic Properties and Applications of Quantum Dots
1. 17.1 Introduction
2. 17.2 Epitaxial Growth and Structure of Quantum Dots
3. 17.3 Excitons in Quantum Dots
4. 17.4 Optical Properties
5. 17.5 Quantum Dot Applications
6. 17.6 Conclusions
7. Acknowledgments
8. References
18 Perovskites – Revisiting the Venerable ABX₃ Family with Organic Flexibility and New Applications
1. 18.1 Introduction
2. 18.2 Hybrid Perovskites in Photovoltaics
3. 18.3 Light‐Emitting Diodes Using Solution‐Processed Lead Halide Perovskites
4. 18.4 Ionizing Radiation Detectors Using Lead Halide Perovskite Materials: Basics, Progress, and Prospects
5. 18.5 Conclusions
6. Acknowledgments
7. References
19 Optical Properties and Spin Dynamics of Diluted Magnetic Semiconductor Nanostructures
1. 19.1 Introduction
2. 19.2 Quantum Wells
3. 19.3 Fabrication of Nanostructures by Electron‐Beam Lithography
4. 19.4 Self‐Assembled Quantum Dots
5. 19.5 Hybrid Nanostructures with Ferromagnetic Materials
6. 19.6 Conclusions
7. Acknowledgments
8. References
20 Kinetics of the Persistent Photoconductivity in Crystalline III‐V Semiconductors
1. 20.1 Introduction
2. 20.2 A Review of PPC in III‐V Semiconductors
3. 20.3 Key Physical Terms Related to PPC
4. 20.4 Kinetics of PPC in III‐V Semiconductors
5. 20.5 Conclusions
6. Acknowledgments
7. 20.A On the Reaction Rate Under the Uniform Distribution
8. References
Index
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List of Tables

Chapter 1
1. Table 1.1 Cauchy's dispersion parameters of Eq. (1.15) for Ge, Si, and Diamond f...
2. Table 1.2 Sellmeier coefficients of a few materials, whereλ ₁, λ ₂, λ...
3. Table 1.3 Parameters of Eq. (1.19) for some selected materials.
4. Table 1.4 FB coefficients for selected semiconductors [42] for four terms (i = 1...
5. Table 1.5 Various selected simple relationships proposed betweenn and the bandga...
6. Table 1.6 Examples of parameters for Wemple–DiDomenico dispersion relationship i...
Chapter 2
1. Table 2.1 Crystal structure, lattice parametera, bandgap energy E _g at 300 K, typ...
2. Table 2.2 Values of the quantities required for calculatingn and K from Eq. (2.2...
3. Table 2.3 Occupation of outer electronic shells for rare earth elements.
4. Table 2.4 The reduced matrix elements ofU ^(k) (k = 2, 4, and 6) and typical wavel...
5. Table 2.5 Selected examples of intensity parameters Ω₂ (k = 2, 4 and 6) for Er³⁺...
6. Table 2.6 Verdet constants of some selected materials from various sources, incl...
Chapter 3
1. Table 3.1 The effective mass of electrons in the extended and tail states of a‐S...
2. Table 3.2 The optical bandgap of a‐Si_1–xC_x:H films obtained from Tauc's (E...
Chapter 4
1. Table 4.1 Electronic configurations for ions of the 3d series.
Chapter 5
1. Table 5.1 Rates of absorption of photons to form singlet excitons due to exciton...
2. Table 5.2 The calculated intersystem crossing rate K _isc from Eq. (5.33) and exper...
Chapter 7
1. Table 7.1 Values ofE _mx estimated from the maximum of the observed PL intensity f...
2. Table 7.2 The maximum rates,R _sp1 and R _sp2, of spontaneous emission and the corre...
3. Table 7.3 Rates of spontaneous emission and corresponding radiative lifetimes ca...
4. Table 7.4 Bandgap reduction, ΔE estimated from the observed data [67] in various...
Chapter 10
1. Table 10.1 Photo‐darkening (red shift)ΔE and refractive index increase Δn...
2. Table 10.A.1 Active optical devices.
Chapter 12
1. Table 12.1 Oxygen‐plasma‐induced low‐conductivity layer thickness and ΔR for the...
2. Table 12.2 Summary of performance of OLEDs prepared with different anode interla...
3. Table 12.3 A summary of the EQE of OLEDs with hybrid MoO₃‐PEDOT:PSS HIL, fabrica...
4. Table 12.4 Summary of rms surface roughness measured for ITO, evaporated MoO₃, P...
5. Table 12.5 Values of work function of HILs obtained from UPS measurements.
Chapter 13
1. Table 13.1 Summary of the power efficiency and CIE color coordinates of a set of...
2. Table 13.2 Summary of CIE color coordinates and luminance measured for emissions...
3. Table 13.3 Summary of CE, PE, CIE coordinates at 0° and 60° obtained from the an...
Chapter 14
1. Table 14.1 Difference in solar transmittance (T _sol), luminous transmittance (T _lu...
2. Table 14.2 Refractive indexn of rutile and anatase TiO₂ thin films at the design...
3. Table 14.3 Bandgap of the anatase and rutile TiO₂ films extrapolated by Tauc plo...
Chapter 15
1. Table 15.1 Adjusted values of As₅₀Se₅₀ film thickness and parameters of Tauc–Lor...
2. Table 15.2 Determined grating period and profile depth (× indicates unaccessible...
3. Table 15.3 Advantages and disadvantages of applied methods.
Chapter 17
1. Table 17.1 List of lifetimes (T ₁), dephasing times (T ₂ and ), homogeneous linew...
Chapter 18
1. Table 18.1 Commonly used A‐ and B‐site cations [11].
2. Table 18.2 Material, processing, gamma energy resolution (or x‐ray dosimetric se...
3. Table 18.3 Material, processing method (melt or solution), measurement temperatu...

List of Illustrations

Chapter 1
1. Figure 1.1 Refractive index n and extinction coefficient K obtained from a sin...
2. Figure 1.2 (a) Complex relative permittivity of a silicon crystal as a functio...
3. Figure 1.3 n and K versus photon energy for crystalline SiC. The solid line is...
4. Figure 1.4 Refractive index n and the group index N _g of pure SiO₂ (silica) gla...
5. Figure 1.5 Schematic sketch of the typical behavior of light passing through a...
6. Figure 1.6 An example of a typical transmission spectrum of a 0.969‐μm‐thick a...
7. Figure 1.7 The construction of envelopes in the transmission spectrum of the t...
8. Figure 1.8 Determination of the refractive index from the transmission spectru...
9. Figure 1.9 Regenerated transmission spectrum of the sample in Figure 1.6.
10. Figure 1.10 System of an absorbing thin film with a variation in thickness on ...
11. Figure 1.11 The refractive index of a sample with = 1 μm and Δd = 30 nm, and...
12. Figure 1.12 A regenerated transmission spectrum of a sample with an average th...
13. Figure 1.13 A flow chart highlighting the steps involved in the Swanepoel tech...
14. Figure 1.14 Transmitted and reflected light through a slab of material in whic...
15. Figure 1.15 (a) Typical polycrystalline sample with a rough surface whose opti...
16. Figure 1.16 Medium with light absorption and scattering: K is the absorption a...
17. Figure 1.17 UV‐visible diffuse reflectance spectra (left) and the Tauc‐like pl...
Chapter 2
1. Figure 2.1 Absorption coefficient is plotted as a function of the photon energ...
2. Figure 2.2 Infrared refractive index n, extinction coefficient K (left), and r...
3. Figure 2.3 Free carrier absorption coefficient (1/mm) in n‐GaP at 300 K [15],
4. Figure 2.4 (a) Free carrier absorption due to holes in p‐Ge [18]. (b) The vale...
5. Figure 2.5 (a) A direct transition from the valence band (VB) to the conductio...
6. Figure 2.6 (a) Indirect transitions across the bandgap involve phonons. Direct...
7. Figure 2.7 (a) Optical transmittance of (GeS₂)_0.9(Ga₂S₃)_0.1 glass doped with 0...
8. Figure 2.8 Energy level diagram of the low‐lying 4f^N states of trivalent ions ...
9. Figure 2.9 A schematic illustration of an electroabsorption modulator using th...
10. Figure 2.10 The Faraday effect. The sense of rotation of the optical field E d...
11. Figure 2.11 Plot of the experimental effective refractive index vs porosity an...
12. Figure 2.12 Refractive index and the extinction coefficient vs wavelength for ...
Chapter 3
1. Figure 3.1 A schematic illustration of the electronic energy states, E ₂, E _c, E
2. Figure 3.2 The optical absorption spectra of obliquely deposited a‐As₂S₃, wher...
3. Figure 3.3 The optical absorption spectra of obliquely deposited a‐Se, where (...
4. Figure 3.4 A comparison of the optical absorption coefficient of a‐Si:H, nc‐Si...
5. Figure 3.5 Typical spectral dependence of the optical absorption coefficient i...
Chapter 4
1. Figure 4.1 Complex refractive index (n, k) versus wavelength for silica glass ...
2. Figure 4.2 Absorption coefficient plotted as a function of wavelength for sili...
3. Figure 4.3 Reflection coefficient at normal incidence versus wavelength for an...
4. Figure 4.4 Reflection (R) and transmission (T) coefficients for intensity at n...
5. Figure 4.5 Plot of reflection (R) and transmission (T) coefficients versus the...
6. Figure 4.6 Brewster and critical angles as a function of relative refractive i...
7. Figure 4.7 Abbe diagram for common optical glasses. Note that the Abbe number ...
8. Figure 4.8 Reciprocal of the Verdet constant for Ce³⁺ ions in a phosphate ...
9. Figure 4.9 Verdet constants for undoped and rare‐earth‐doped fluorozirconate g...
10. Figure 4.10 Energy level diagram for Pr³⁺ ions.
11. Figure 4.11 Optical absorption spectrum of Pr³⁺ ions in ZBLAN glass
12. Figure 4.12 Energy levels for the d⁷ configuration.
13. Figure 4.13 Optical absorption spectrum of Co²⁺ in ZBLA glass and MgF₂.
14. Figure 4.14 Luminescence spectrum for Pr³⁺ ions in ZBLA glass.
15. Figure 4.15 Schematic diagram for the spectral dependence of extinction coeffi...
16. Figure 4.16 Reflectivity of a Bragg grating inscribed in a silica optical fibe...
17. Figure 4.17 Variation of refractive index across the width of light waveguide ...
18. Figure 4.18 The evolution of PL spectra of samarium‐doped fluorophosphate glas...
19. Figure 4.19 The Sm²⁺ /Sm³⁺ conversion pattern induced by X‐rays throug...
20. Figure 4.20 X‐ray image of a semiconductor IC recorded in Sm‐doped fluorophosp...
21. Figure 4.21 Polar plot showing the angular dependence (dashed line) of the sca...
22. Figure 4.22 Visual appearance of fluorochlorozirconate glass ceramic storage p...
23. Figure 4.23 PSL efficiencies relative to BaFBr: Eu(100 ppm) for annealed glass...
24. Figure 4.24 Anion distribution for a ZrBaLaNa glass showing fluorine distribut...
Chapter 5
1. Figure 5.1 Schematic illustration of excitonic bands for n = 1 and 2 in semico...
2. Figure 5.2 Dependence of (a) exciton binding energy ( ) (Eq. (5.3)) and (b) si...
3. Figure 5.3 (a) Low‐temperature absorption, and (b) photoluminescence spectra i...
4. Figure 5.4 Schematic illustration of singlet and triplet excitonic states in a...
5. Figure 5.5 Schematic diagrams of (a) one‐spin configuration for the singlet; a...
6. Figure 5.6 Schematic illustration of a singlet excited state whose molecular v...
7. Figure 5.7 Schematic illustration of thermally activated up‐conversion or reve...
8. Figure 5.8 Schematic illustration of the formation of CT excitons at the D‐A i...
9. Figure 5.9 Schematic illustration of the formation of CT excitons in a ternary...
Chapter 6
1. Figure 6.1 Illustration of radiative recombination processes in organic materi...
2. Figure 6.2 Schema of radiative recombination processes in semiconductors. (a) ...
3. Figure 6.3 Basic mechanisms important for up‐conversion of photoluminescence (...
4. Figure 6.4 Experimental set‐up of static PL measurement. C1, opticalchopper at...
5. Figure 6.5 An RC low‐pass filter (RC‐LPF) with time‐constant τ = RC to re...
6. Figure 6.6 TRS kernel λ(x) (dotted curve) and QFRS kernel ξ(x) (soli...
7. Figure 6.7 Block diagram of a conventional time‐correlated single photon count...
8. Figure 6.8 (a) Experimental set‐up of DPDL QFRS system. C, optical chopper; D,...
9. Figure 6.9 (a) G‐evolved QFRS spectra from 2 ns to 160 s for a‐Si:H at 3.7 K a...
10. Figure 6.10 The plots ○, □, and ▴ indicate steady‐state carrier densities vs. ...
11. Figure 6.11 (a) QFRS spectra of the monochromatized PL for emission energy ℏω...
12. Figure 6.12 PL spectra of QFRS signals at fixed lifetime τ_S ≈ 4.1 μs, τ _T ...
13. Figure 6.13 (a) QFRS spectra of a‐Si:H excited at various PL excitation energy...
14. Figure 6.14 (a) Temperature T‐evolved QFRS spectra of undoped a‐Si:H film (S16...
15. Figure 6.15 G‐evolved QFRS spectra of a‐Si:H excited with various G = 6.7 × 10
16. Figure 6.16 Electric field F‐evolved QFRS spectra of undoped a‐Si:H film (S163...
17. Figure 6.17 DP lifetime τ _D as a function of T for the samples (•) S119 an...
18. Figure 6.18 (a) QFRS spectra of a‐Si:H at 3.7 K, E _x = 2.33 eV, and G = 7.7 × 1...
19. Figure 6.19 Schematic models of three types of radiative recombination in a‐Si...
20. Figure 6.20 Double‐log plots of residual PL decay of a‐Si:H at 3.7 K and E _x = ...
21. Figure 6.21 Parameters of SE function (I‐shape bars) obtained by curve‐fitting...
22. Figure 6.22 Double‐log plots of residual PL decay of a‐Si:H film A with G = 2....
23. Figure 6.23 Plots of steady‐state carrier concentrations n vs. T; the plots n _m...
24. Figure 6.24 Schematic of three‐level model for green UCPL Er³⁺ (² H _11/2/ ⁴ S
25. Figure 6.25 Pump power (975 nm laser) P‐evolved QFRS spectra of green (² H _11/2 ...
26. Figure 6.26 (a) Relaxation rate R ₁(Φ) at level 1 (⁴ I _11/2) vs. excitation ...
Chapter 7
1. Figure 7.1 Rates of spontaneous emission plotted as a function of the emission...
2. Figure 7.2 Rates plotted as a function of temperature at an emission energy of...
3. Figure 7.3 A schematic structure of a simple OLED and its operation mechanism.
4. Figure 7.4 Schematic presentation of the mechanism of TADF in OLEDs. A triplet...
Chapter 8
1. Figure 8.1 Time development of measured volume expansion in amorphous Selenium...
2. Figure 8.2 The measured shrinkage of a‐Se (dotted line) [7] and the fitted cur...
3. Figure 8.3 Snapshot of a glassy selenium network. The sample can move in z‐dir...
4. Figure 8.4 Time development of volume expansion of a‐As₂Se₃. Thin solid line i...
5. Figure 8.5 The measured decay (thin solid line) and the fitted theoretical cur...
6. Figure 8.6 Volume changes in function of time of obliquely deposited a‐AsSe th...
7. Figure 8.7 Volume changes of the same obliquely deposited a‐AsSe thin film fit...
Chapter 9
1. Figure 9.1 PBG parameters that affect the frequency and associated stop band. ...
Chapter 10
1. Figure 10.1 Relations between atomic structure (atoms and bonding), electronic...
2. Figure 10.2 Atomic structures of (a) SiO₂ and (b) As₂S₃ glasses. In (a), Si an...
3. Figure 10.3 Roles of electric susceptibilities, χ ⁽¹⁾, χ ⁽²⁾, and χ...
4. Figure 10.4 Schematic illustrations of (a) one‐photon, (b) two‐photon, (b') re...
5. Figure 10.5 Schematic illustrations of absorptionspectra, α and β, a...
6. Figure 10.6 Spectral dependence of the one‐ and two‐photon absorption coeffici...
7. Figure 10.7 Density of states (DOS) of the valence (O 2p) and conduction (Si...
8. Figure 10.8 Linear and nonlinear refractivity, n ₀ (open symbols) and n ₂ (solid...
9. Figure 10.9 Two‐photon absorption spectra β(ℏω ) in As₂S₃ (so...
10. Figure 10.10 Photo‐induced phenomena scaled by the excitation photon energy ℏω...
11. Figure 10.11 Schematic illustrations of the bandgap excitations with one‐photo...
12. Figure 10.12 A triode‐type optical device.
13. Figure 10.13 A Mach‐Zhender–type logic waveguide with nonlinear optical gates ...
Chapter 11
1. Figure 11.1 Some backbone structures of π‐conjugated polymers.
2. Figure 11.2 (a) sp ² hybridized orbitals and p _z orbital. (b) σ and π bonds in a...
3. Figure 11.3 (a) In the case where carbon atoms are equally spaced, the linked ...
4. Figure 11.4 Examples of π‐conjugated polymers with (a) degenerate and (b) non‐...
5. Figure 11.5 Schematic energy band structure in π‐conjugated polymers.
6. Figure 11.6 Absorption and photoconductivity (PC) yield spectra of spin‐coated...
7. Figure 11.7 Absorption spectra of ordered and disordered films of a polythioph...
8. Figure 11.8 Schematic illustration of vibronic potential energy curves for (a)...
9. Figure 11.9 Examples of vibronic structure calculated using Eq. (11.10) for se...
10. Figure 11.10 Absorption and PL spectra calculated using Eq. (11.10). The diffe...
11. Figure 11.11 Bond arrangements (a) in the ground state and (b) in the self‐tra...
12. Figure 11.12 Site‐selective fluorescence measurements on a disordered PPV film...
13. Figure 11.13 Charged excited states in π‐conjugated polymers. In these polymer...
14. Figure 11.14 (Upper) PA and (lower) PADMR spectra of (a) disordered and (b) or...
15. Figure 11.15 Energy structure of polarons. Solid lines in the left side corres...
16. Figure 11.16 Symmetry of electronic states in C_2nH_2n+2 (in the case of n =...
17. Figure 11.17 Symmetry of configuration of C_2nH_2n+2 (in the case of n = 3)....
18. Figure 11.18 Two‐photon absorption process. In the one‐photon process, transit...
19. Figure 11.19 (a) Squares represent the TPE spectrum of a polyfluorene derivati...
20. Figure 11.20 Example of EA spectrum of π‐conjugated polymers. The solid and da...
21. Figure 11.21 EA spectra simulated using (a) two‐level model, (b) three‐level m...
22. Figure 11.22 (a) Intermolecular interaction and the resultant energy splitting...
23. Figure 11.23 Absorption spectra of substituted merocyanine dyes in solution (M...
24. Figure 11.24 Absorption spectrum of (a) H‐aggregates of a nitroazo dye deposit...
25. Figure 11.25 (a) PL and absorption spectra of an ordered P3HT film measured at...
Chapter 12
1. Figure 12.1 (a) A conventional bottom‐emitting OLED is made on a transparent s...
2. Figure 12.2 Schematic energy level diagram of an OLED, showing the highest occ...
3. Figure 12.3 Molecular structures of some small molecular and polymeric semicon...
4. Figure 12.4 AFM images obtained over an area of 300 μm × 300 μm for ITO films ...
5. Figure 12.5 Resistivity of ITO films as a function of hydrogen partial pressur...
6. Figure 12.6 Carrier mobility and concentration of ITO films as functions of hy...
7. Figure 12.7 Wavelength‐dependent transmittance, T(λ) of ITO films prepare...
8. Figure 12.8 Square of absorption coefficient, α ², plotted as a function o...
9. Figure 12.9 SIMS depth profile of typical ITO film prepared at an optimal hydr...
10. Figure 12.10 Comparison of SIMS depth profiles of normalized relative oxygen c...
11. Figure 12.11 Comparison of SIMS depth profiles of normalized relative tin conc...
12. Figure 12.12 J–V characteristics of identical devices made on wet‐cleaned, oxy...
13. Figure 12.13 J–V characteristics of identical devices made on ITO anodes treat...
14. Figure 12.14 Comparison of TOF‐SIMS depth profiles of relative oxygen concentr...
15. Figure 12.15 J–V characteristics of devices made with different LiF interlayer...
16. Figure 12.16 (a) J – V and (b) L – V characteristics measured for the ...
17. Figure 12.17 A cross‐sectional view of active‐matrix displays with a TOLED on ...
18. Figure 12.18 A cross‐sectional view of a typical TOLED. When a TOLED is fabric...
19. Figure 12.19 L–V characteristics of a bottom‐emitting OLED, ITO/PEDOT/PPV/Ca/A...
20. Figure 12.20 A top‐emitting OLED with a transparent anode and a semitransparen...
21. Figure 12.21 (a) A cross‐sectional view of a typical TOLED on an Al‐PET and (b...
22. Figure 12.22 J–V (a), L–V (b) and EL efficiency–voltage (c) characteristics me...
23. Figure 12.23 The schematic diagrams of (a) the energy levels of all functional...
24. Figure 12.24 (a) J–V and (b) L–V characteristics of a set of OLEDs fabricated ...
25. Figure 12.25 Comparison of power efficiency as a function of the luminance for...
26. Figure 12.26 EQE as a function of the luminance for a set of structurally iden...
27. Figure 12.27 J–V characteristics as a function of luminance, measured for a se...
28. Figure 12.28 EQE as a function of luminance, measured for a set of OLEDs with ...
29. Figure 12.29 AFM images measured for the surfaces of (a) a bare ITO, (b) a vac...
30. Figure 12.30 AFM images measured for (a) a pristine PEDOT:PSS HIL, (b) a hybri...
31. Figure 12.31 UPS spectra measured for the thin film prepared by solution‐proce...
32. Figure 12.32 XPS spectrum of the core levels of Mo 3d measured for the thin fi...
33. Figure 12.33 (a) Secondary‐electron cutoff, and (b) the HOMO edge in UPS spect...
34. Figure 12.34 (a) S2 s core level XPS spectrum measured for the pristine PEDOT:...
35. Figure 12.35 S2 s and Mo3d core level XPS spectra measured for the hybrid MoO₃
Chapter 13
1. Figure 13.1 PL spectra measured for thin film emitters of Firpic and Ir(fbi)₂a...
2. Figure 13.2 (a) Schematic device architecture and (b) the schematic energy dia...
3. Figure 13.3 Power efficiency–luminance characteristics of a set of WOLEDs with...
4. Figure 13.4 EL spectra of a set of OLEDs with different combinations of FIrpic...
5. Figure 13.5 J–V characteristics measured for WOLEDs fabricated with and withou...
6. Figure 13.6 Power efficiency–luminance characteristics measured for the WOLEDs...
7. Figure 13.7 EL spectra measured for the WOLEDs with and without the presence o...
8. Figure 13.8 Schematic energy diagram illustrating the triplet energy level of ...
9. Figure 13.9 (a) Schematic cross‐sectional view of the dichromatic WOLEDs, and ...
10. Figure 13.10 Power efficiency–luminance characteristics measured for the...
11. Figure 13.11 EL spectra measured for the dichromatic WOLEDs with different ETL...
12. Figure 13.12 Schematic energy levels of the materials and energy transfer path...
13. Figure 13.13 (a) Device structure and (b) the schematic energy diagram of WOLE...
14. Figure 13.14 EL spectra emission of TmPyPB‐based WOLEDs at different separatio...
15. Figure 13.15 Power efficiency–luminance characteristics of TmPyPB‐based WOLEDs...
16. Figure 13.16 (a) Effect of HTL/ETL thickness, varied from 0 to 80 nm from poin...
17. Figure 13.17 Calculated transparency of the transparent WOLEDs, with a configu...
18. Figure 13.18 (a) EL spectra of a transparent WOLED measured from the bottom an...
19. Figure 13.19 (a) Schematic cross‐sectional view of a control transparent WOLED...
20. Figure 13.20 Calculated transparency of the transparent WOLEDs, with a configu...
21. Figure 13.21 Comparison of measured (solid symbols) and calculated (open symbo...
22. Figure 13.22 Ratio of the luminance of EL emission measured from the anode to ...
23. Figure 13.23 Visible‐light transparency of different transparent WOLEDs fabric...
24. Figure 13.24 Emission spectra calculated for transparent WOLEDs with different...
25. Figure 13.25 CIE coordinates and corresponding EL spectra from both sides of t...
26. Figure 13.26 Power efficiency as a function of luminance, measured for a set o...
27. Figure 13.27 EQE measured from both sides of the transparent WOLEDs made with ...
28. Figure 13.28 EL spectra measured from (a) anode and (b) cathode, of a transpar...
29. Figure 13.29 Normalized EL spectra measured for a transparent WOLED fabricated...
30. Figure 13.30 Calculated radiance as a function of the viewing angle obtained f...
31. Figure 13.31 CIE coordinates (x, y) as a function of the viewing angle, obtain...
32. Figure 13.32 Emission spectra, from anode and cathode sides, for of a transpar...
33. Figure 13.33 CIE coordinates (x, y), from (a) anode and (b) cathode sides, as ...
Chapter 14
1. Figure 14.1 Schematic presentation of reflection, refraction, and transmission...
2. Figure 14.2 Schematic diagram of a multi‐layer structure that consists of thin...
3. Figure 14.3 Schematic representation of a dual‐target radio frequency (RF) mag...
4. Figure 14.4 Spectral transmittance as a function of an applied external temper...
5. Figure 14.5 Transition temperature as a function of doping level in atomic %. ...
6. Figure 14.6 Radiative cooling power of SSRM with composite films of SiO and Si...
7. Figure 14.7 A model of sky radiator with an SSRM consisting of SiO/V_1‐xW
8. Figure 14.8 Simulated radiative cooling power vs. SSRM temperature for semicon...
9. Figure 14.9 Simulated radiative cooling power vs. SSRM temperature, taking int...
10. Figure 14.10 (a) Real part and (b) imaginary part of the complex dielectric fu...
11. Figure 14.11 (a) Real part and (b) imaginary part of the complex dielectric fu...
12. Figure 14.12 Real (n, solid curves) and imaginary (k, dashed curves) parts of ...
13. Figure 14.13 Change in relative phase Δ between s‐ and p‐polarizations (i...
14. Figure 14.14 Left: Polarization state of reflected light at 633 nm thin VO₂ fi...
15. Figure 14.15 Change in relative phase Δ between s‐ and p‐polarizations (i...
16. Figure 14.16 Polarization state of reflected light at 832 nm on a 72‐nm‐thick ...
Chapter 15
1. Figure 15.1 (a) Spatial dependence of an electric field in an elliptically pol...
2. Figure 15.2 Linear(pink), elliptical (blue), and circular (green) polarization...
3. Figure 15.3 S‐ and p‐ polarized waves reflected from an optically isotropic sa...
4. Figure 15.4 Definition of the ellipsometric parameters Ψ and Δ .
5. Figure 15.5 Schematic experimental setup of null ellipsometry.
6. Figure 15.6 Cartesian coordinate systems, defined by base vectors s and p, for...
7. Figure 15.7 (a) Absolute values and (b) phases of reflection coefficients toge...
8. Figure 15.8 (a) Recorded ellipsometry parameters on NiFe₂O₄ single crystal and...
9. Figure 15.9 Schematic spectral dependence of the imaginary part of the relativ...
10. Figure 15.10 Typical reflectance spectrum of an amorphous chalcogenide thin fi...
11. Figure 15.11 Ellipsometry and spectrophotometry measurements of a thin film of...
12. Figure 15.12 Signature of structural defects in the SiO₂ layer presented in th...
13. Figure 15.13 SEM top view of NCD film (left), schematic drawing of van der Dri...
14. Figure 15.14 (a) Best‐fit spectra for a selected angle of incidence of 65° [32...
15. Figure 15.15 Diamond quality of NCD films deposited with different pulsed micr...
16. Figure 15.16 Grating cross‐sectional (left, [47]) and top‐view photo of a set ...
17. Figure 15.17 Grating surface recorded by the (top) atomic force microscopy (AF...
18. Figure 15.18 Best‐fit scatterometry spectra and grating profile determined by ...
Chapter 16
1. Figure 16.1 Formation rate of an exciton via LA (solid curve) and TA (dash‐dot...
2. Figure 16.2 Formation rate of an exciton due to acoustic phonon emission in Ga...
3. Figure 16.3 Formation rate of an exciton in GaAs quantum wells as a function o...
4. Figure 16.4 Formation rate of an exciton in GaAs QWs as a function of the cent...
5. Figure 16.5 Formation rate of an exciton in GaAs QWs as a function of the carr...
6. Figure 16.6 Formation rate of an exciton in GaAs QWs is plotted as a function ...
7. Figure 16.7 LA phonon‐emission rates due to (a) deformation potential (DP) and...
8. Figure 16.8 TA phonon emission rates due to (a) deformation potential (DP) and...
9. Figure 16.9 LO phonon‐emission rate as a function of θ and q for GaAs/Al₀...
10. Figure 16.10 Phonon‐emission rate as a function of T _ex for GaAs/Al_0.3Ga_0.7As Q...
11. Figure 16.11 Schematic illustration of (a) the structure of electron and heavy...
12. Figure 16.12 Relaxation rate of a 1s (2e, 2h) exciton to a (1e, 2h) free elect...
13. Figure 16.13 Relaxation rate of a 1s(2e, 2h) exciton to a (1e, 2h) free electr...
14. Figure 16.14 Relaxation rate of (a) 1s(2e, 1h) exciton to (1e, 1h) free electr...
15. Figure 16.15 Dephasing rate as a function of K _|| for L _z = 28 Å QWs with N _ex = ...
16. Figure 16.16 Dephasing rate as a function of K _|| for L _z = 80 Å QWs with N _ex = ...
17. Figure 16.17 Dephasing rate as a function of T and T _ex at K _|| = 0.0004 × 10⁸ m
18. Figure 16.18 Dephasing rate as a function of T and T _ex at K _|| = 1 × 10⁸ m⁻¹...
19. Figure 16.19 Dephasing rate as a function of N _ex and K _|| at T = 10 and T _ex = 5...
20. Figure 16.20 Dephasing rate as a function of N _ex and K _|| at T = 10 and T _ex = 4...
21. Figure 16.21 COM binding energy as a function of L _z in the plane QWs due to in...
22. Figure 16.22 Localization rates as a function of |K_| due to LA and TA phonon ...
23. Figure 16.23 Localization rate due to acoustic phonon emission as a function o...
24. Figure 16.24 Localization rate as a function of L _z for N _ex = 5 × 10⁹ cm⁻²...
25. Figure 16.25 Localization rate as a function of |K _||| for four different later...
Chapter 17
1. Figure 17.1 SK‐growth of InAs QDs on GaAs. Uncapped QDs: (a) artist's view and...
2. Figure 17.2 (a) Plan‐view and (b) cross‐sectional TEM images of arrays and sta...
3. Figure 17.3 Design of the substrate pattern before growth from Reference 15. T...
4. Figure 17.4 (a) Monolayer fluctuations at both interfaces of thin GaAs quantum...
5. Figure 17.5 (a) Schematics of sub‐monolayer (SML) growth of smaller (SQD) or l...
6. Figure 17.6 (a) Schematic VLS‐grown GaAs (light gray) nanowire with InAs (dark...
7. Figure 17.7 QD energy level scheme showing ground state (G), dark excitons (X_d
8. Figure 17.8 (a) PL spectra of SK‐grown In_xAl_yGa_1‐x‐yAs QDs with th...
9. Figure 17.9 High‐resolution PL spectrum at 10 K as detected through a 500 nm a...
10. Figure 17.10 Low‐temperature PL decays of ensembles of GaAs interface QDs (sol...
11. Figure 17.11 Normalized LDOS ρ _l(z, ω)/ρ(ω) as function of ...
12. Figure 17.12 Oscillator strength (triangles) and internal quantum efficiency (...
13. Figure 17.13 Speckle analysis of resonantly excited secondary emission from Ga...
14. Figure 17.14 (a) Transient FWM experiment on an ensemble of SK‐grown QDs. (b) ...
15. Figure 17.15 Linewidth (FWHM) of SK‐grown InAlGaAs QDs as a function of temper...
16. Figure 17.16 Development over time in diode laser threshold current density fr...
17. Figure 17.17 Sketch of p‐i‐n laser or optical amplifier structure with QDs as ...
18. Figure 17.18 Gain of a QD semiconductor amplifier at room temperature as a fun...
19. Figure 17.19 Change of device gain as a function of delay after a 150 fs pump ...
20. Figure 17.20 Time‐integrated four‐wave mixing signal in a quantum‐dot semicond...
21. Figure 17.21 (a) High‐power QD laser emitting at 1.3 μm in a single transverse...
22. Figure 17.22 Output power as a function of pump power for different values of ...
23. Figure 17.23 Scanning electron microscope pictures of different types of nanol...
24. Figure 17.24 (a) HBT experiment measuring coincidences (C) of photon counts in...
25. Figure 17.25 (a) Sketch of a Hong–Ou–Mandel interferometer for measuring the i...
26. Figure 17.26 Single‐photon sources. (a) Micropillar cavity with QD embedded. (...
27. Figure 17.27 Scanning electron micrographs of tapered nanowires with good extr...
28. Figure 17.28 (a) SEM picture of a GaAs photonic crystal membrane with InAs QDs...
29. Figure 17.29 QD PL decay rate (open squares) as a function of the detuning fro...
Chapter 18
1. Figure 18.1 (a) The basic structure is built from edge‐sharing BX₆ octahedra. ...
2. Figure 18.2 Double perovskite structure illustrated.
3. Figure 18.3 (a) Three angles, β, γ, and δ, are used to specify ...
4. Figure 18.4 Best research‐cell efficiency chart published by the National Rene...
5. Figure 18.5 Mesoscopic perovskite solar cell with mesoporous TiO₂ layer (left)...
6. Figure 18.6 Overview of the solution‐processed deposition methods for perovski...
7. Figure 18.7 Crystal structure of the Ruddlesden–Popper layered perovskites.
8. Figure 18.8 (Top) Photos of high‐efficiency perovskite LED devices in room tem...
9. Figure 18.9 Colloidal perovskite CsPbX3 NCs (X = Cl, Br, I) exhibit compositio...
10. Figure 18.10 (Left) Schematic structures of the 3D and low‐dimensional lead ha...
11. Figure 18.11 Fabrication process of Cs‐Pb‐Br perovskite thin films. (a) Illust...
12. Figure 18.12 (a) Cs‐Pb‐Br perovskite thin films on glass slides in room light,...
13. Figure 18.13 (a) Quantum yield (QY) of Cs‐Pb‐Br perovskite thin films from pre...
14. Figure 18.14 Photos of pure CsPbBr₃ (Cs1) and Cs₄PbBr₆ crystals with embedded ...
15. Figure 18.15 Morphology of thin films comprising CsPbBr₃/Cs₄PbBr₆ nano‐inclusi...
16. Figure 18.16 Device structure of the Cs‐Pb‐Br perovskite LEDs.
17. Figure 18.17 (a) Current density, (b) current efficiency, and (c) external qua...
18. Figure 18.18 TEM of CsPbBr₃ inclusions embedded Cs₄PbBr₆.
19. Figure 18.19 Photos of (a) 0.15 cm² small area and (b) 2 cm² large area perovs...
20. Figure 18.20 (a) Schematic of operational LED device with Cs₄PbBr₆ crystal emb...
21. Figure 18.21 Illustration of a pulse height spectrum plotting the histogram of...
22. Figure 18.22 (a) Total absorption coefficient of lead (atomic number 82) for g...
23. Figure 18.23 (Top frame, left scale) Linear energy deposition [dE/dx (eV/nm)] ...
24. Figure 18.24 Simulated electron energy‐loss trajectories projected in two spat...
25. Figure 18.25 Energy‐resolved spectra of (a) 3 × 3 × 0.9 mm³ CsPbBr₃ room‐tempe...
26. Figure 18.26 Depiction of steps in growth of Cs₄PbBr₆ crystals containing nano...
27. Figure 18.27 Crystals of the Cs₄PbBr₆/CsPbBr₃ nanocomposite (left) under white...
28. Figure 18.28 (a) X‐ray excited luminescence spectrum and (b) decay in the CsPb...
29. Figure 18.29 Subnanosecond luminescence under 300 fs, 60 μJ cm⁻², 420 nm...
30. Figure 18.30 Calculated band structures of (a) Cs₄PbBr₆ and (b) CsPbBr₃ using ...
31. Figure 18.31 Calculated ionization potential (IP) and electron affinity (EA) r...
32. Figure 18.32 Calculated atomic structure and charge density isosurface of (a) ...
Chapter 19
1. Figure 19.1 Energy diagram of the magnetic DQW with a magnetic well (MW) of Zn
2. Figure 19.2 Excitonic PL spectra with circular polarizations (σ⁺: solid li...
3. Figure 19.3 Circularly polarized PL intensities (σ⁺: solid lines; σ⁻
4. Figure 19.4 Transient differential absorption spectra of a magnetic Cd_0.95Mn_0....
5. Figure 19.5 (a) Transient differential absorption spectra measured with the pr...
6. Figure 19.6 (a) Schematic drawing of the dot structure fabricated from a DMS‐Q...
7. Figure 19.7 Excitonic PL spectra from a DMS‐dot of Zn_0.80Cd_0.15Mn_0.05Se with a...
8. Figure 19.8 Exciton PL peak energies as a function of time for DMS‐QDs with a ...
9. Figure 19.9 (a) A double quantum dot (DQD), one magnetic and the other nonmagn...
10. Figure 19.10 Micro‐PL spectra of self‐assembled quantum dots (SAQDs) of CdSe i...
11. Figure 19.11 Giant Zeeman shifts of the excitons in self‐assembled CdSe QDs (c...
12. Figure 19.12 (a) A coupled SAQD structure of CdSe with a DMS‐QW of Zn_0.68Cd_0.2...
13. Figure 19.13 Circularly polarized exciton PL intensities (the open circles) an...
14. Figure 19.14 Circularly polarized exciton PL spectra integrated over a time wi...
15. Figure 19.15 (a) A schematic diagram of the hybrid nanostructure of the DMS‐QW...
16. Figure 19.16 (a) FWHM of the exciton PL spectrum as a function of the external...
17. Figure 19.17 SEM image for the surface of the fabricated hybrid nanostructure,...
18. Figure 19.18 Circularly polarized excitonic PL spectra in the hybrid DMS nanos...
Chapter 20
1. Figure 20.1 Buildup and decay transient of the conductance at 77 and 302 K.
2. Figure 20.2 Typical buildup and decay behavior of PPC in n‐type GaN, which dep...
3. Figure 20.3 Decay of the free‐electron concentration after stopping illuminati...
4. Figure 20.4 Configuration coordinate diagram proposed for n‐type Al_xGa_1‐x...
5. Figure 20.5 Microscopic model for the DX center in Si‐doped Al_xGa_1‐xAs. ...
6. Figure 20.6 Comparison of PPC decays with the stretched exponential function (...
7. Figure 20.7 Configuration coordinate diagram for a DX‐like center.
8. Figure 20.8 Exponential distribution P(U) of the potential barrier U involved ...
9. Figure 20.9 Numerical calculation of P(ν) vs. ν as a function of temperature. ...
10. Figure 20.A.1 Schematic drawing of the extreme case of the exponential distrib...
11. Figure 20.A.2 Schematic drawing of the extreme case of the Gaussian distributi...
12. Figure 20.A.3 Schematic drawing of a uniform distribution.

Wiley Series in Materials for Electronic and Optoelectronic Applications

Optical Properties of Materials and Their Applications

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