Details

<p>Preface xi</p> <p><b>Chapter 1. Introduction to Semiconductor Photodetectors 1</b><br /> <i>Franck OMNES</i></p> <p>1.1. Brief overview of semiconductor materials 1</p> <p>1.2. Photodetection with semiconductors: basic phenomena 3</p> <p>1.3. Semiconductor devices 4</p> <p>1.4. p-n junctions and p-i-n structures 5</p> <p>1.5. Avalanche effect in p-i-n structures 7</p> <p>1.6. Schottky junction  8</p> <p>1.7. Metal-semiconductor-metal (MSM) structures 10</p> <p>1.8. Operational parameters of photodetectors 11</p> <p><b>Chapter 2. PIN Photodiodes for the Visible and Near-Infrared 15</b><br /> <i>Baudoin DE CREMOUX</i></p> <p>2.1. Introduction 15</p> <p>2.2. Physical processes occurring in photodiodes 17</p> <p>2.3. Static characteristics of PIN photodiodes 25</p> <p>2.4. Dynamic characteristics of PIN photodiodes 34</p> <p>2.5. Semiconductor materials used in PIN photodiodes for the visible and near-infrared 42</p> <p>2.6. New photodiode structures 49</p> <p>2.7. Bibliography 55</p> <p><b>Chapter 3. Avalanche Photodiodes 57</b><br /> <i>Gérard RIPOCHE and Joseph HARARI</i></p> <p>3.1. Introduction 57</p> <p>3.2. History 58</p> <p>3.3. The avalanche effect 60</p> <p>3.4. Properties of avalanche photodiodes 66</p> <p>3.5. Technological considerations 76</p> <p>3.6. Silicon avalanche photodiodes 80</p> <p>3.7. Avalanche photodiodes based on gallium arsenide 88</p> <p>3.8. Germanium avalanche photodiodes 90</p> <p>3.9. Avalanche photodiodes based on indium phosphate (InP) 95</p> <p>3.10. III-V low-noise avalanche photodiodes 100</p> <p>3.11. Prospects 104</p> <p>3.12. Conclusion 106</p> <p>3.13. Bibliography 107</p> <p><b>Chapter 4. Phototransistors 111</b><br /> <i>Carmen GONZALEZ and Antoine MARTY</i></p> <p>4.1. Introduction 111</p> <p>4.2. Phototransistors 112</p> <p>4.3. The bipolar phototransistor: description and principles of operation 118</p> <p>4.4. Photodetector circuits based on phototransistors 140</p> <p>4.5. Applications 142</p> <p>4.6. Conclusion 150</p> <p>4.7. Bibliography 151</p> <p><b>Chapter 5. Metal-Semiconductor-Metal Photodiodes 155</b><br /> <i>Joseph HARARI and Vincent MAGNIN</i></p> <p>5.1. Introduction 155</p> <p>5.2. Operation and structure 156</p> <p>5.3. Static and dynamic characteristics 165</p> <p>5.4. Integration possibilities and conclusion 177</p> <p>5.5. Bibliography 178</p> <p><b>Chapter 6. Ultraviolet Photodetectors 181</b><br /> <i>Franck OMNES and Eva MONROY</i></p> <p>6.1. Introduction 181</p> <p>6.2. The UV-visible contrast 189</p> <p>6.3. Si and SiC photodetectors for UV photodetection 190</p> <p>6.4. UV detectors based on III-V nitrides 195</p> <p>6.5. Conclusion 216</p> <p>6.6. Bibliography 218</p> <p><b>Chapter 7. Noise in Photodiodes and Photoreceiver Systems 223</b><br /> <i>Robert ALABEDRA and Dominique RIGAUD</i></p> <p>7.1. Mathematical tools for noise 224</p> <p>7.2. Fundamental noise sources 227</p> <p>7.3. Excess noise 232</p> <p>7.4. Analysis of noise electrical circuits 235</p> <p>7.5. Noise in photodetectors 239</p> <p>7.6. Noise optimization of photodetectors 245</p> <p>7.7. Calculation of the noise of a photoreceiver 253</p> <p>7.8. Comments and conclusions 266</p> <p>7.9. Bibliography 268</p> <p>List of Authors 269</p> <p>Index 271</p>

<b>Didier Decoster</b> is an Associate Professor in the Department of Veterinary Clinical Medicine, at the University of Illinois, USA.

US