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Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides


Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides, Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides


Handbook of Nitride Semiconductors and Devices (VCH), Band 4 Volume 2

von: Hadis Morkoç

379,00 €

Verlag: Wiley-VCH
Format: PDF
Veröffentl.: 30.07.2009
ISBN/EAN: 9783527628421
Sprache: englisch
Anzahl Seiten: 883

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Beschreibungen

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
Preface. Color tables. 1. Metal Contacts to GaN and Processing. 1.1. A Primer for Semiconductor-Metal Contacts. 1.2. Current Flow in Metal-Semiconductor Junctions. 1.3. GaN Schottky  Barriers for High-Voltage Rectifiers. 1.4. Ohmic Contact Resistance. 1.5. Determination of the Contact Resistivity. 1.6. Ohmic Contacts to GaN. 1.7. Structural Analysis of Ohmic Contacts on GaN. 1.8. Etching Techniques for III Nitrides. 1.9. Implant Isolation. 1.10. Process Damage. 2. Determination of Impurity and Carrier Concentrations. 2.1. Impurity Binding Energy. 2.2. Conductivity Type: Hot Probe and Hall Measurements. 2.3. Semiconductor Statistics, Density of States, and Carrier Concentration. 2.4. Capacitance-Voltage Measurements. 3. Carrier Transport. 3.1. Prelude. 3.2. Carrier Scattering. 3.3. Calculated Mobility of GaN. 3.4. Scattering at High Fields. 3.5. Measurements of Mobility and Associated Fundamentals. 3.6. Multiband Effects and Mixed Conductivity. 3.7. van der Pauw Method. 3.8. Quantum Hall Effect - Shubnikov-de Hass. 3.9. Measured Mobility in n-type GaN. 3.10. Measurement of High-Field Telectron Velocity in n-type GaN. 3.11. Carrier transport in p-Type GaN. 3.12. Carrier Transport in InN. 3.13. Carrier Transport in A1N. 3.14. Transport in Unintentionally Doped and High-Resistivity GaN. 3.15. Carrier Transport in Alloys. 3.16. Two-Dimensional transport in n-Type GaN. 3.17. Interface Roughness Scattering. 3.18. Quantum Transport in AlGaN/GaN 2 DEG. 3.19. Observations. 4. The p-n Junction. 4.1. Heterojunctions. 4.2. Band Discontinuities. 4.3. Electrostatic Characteristics of p-n Heterojunctions. 4.4. Current-Voltage Characteristics of p-n Junctions. 4.5. I-V Characteristics of Ideal GaN-Based p-n Junctions. 4.6. I-V Characteristics of GaN-Based p-n Junctions. 4.7. High-Voltage Blocking GaN and AlGaN-Based p-n Junctions. 5. Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures. 5.1. Basics of Photoluminescence. 5.2. Band-to-Band Transitions. 5.3. Optical Transitions in GaN. 5.4. Group-II Element Related Transitions. 5.5. Blue Luminescence Band in Undoped GaN. 5.6. Surface-Related Blue Luminescence in Etched GaN. 5.7. Optical Properties of GaN Doped with Rare Earths. 5.8. Optical Properties of Alloys. 5.9. Optical Properties of Nitride Heterostructures. 5.10. Quantum Dots. 5.11. Intraband or Intersubband Transitions in GaN/AlGaN Quantum Wells. 5.12. Nonlinear Optical Properties of III-Nitrides. References.  Index. Appendix.
Hadis Morkoc received  his Ph.D. degree in Electrical Engineering from Cornell University. From 1978 to 1997 he was with the University of Illinois, then joined the newly established School of Engineering at the Virginia Commonwealth University in Richmond. He and his group have been responsible for a number of advancements in GaN and devices based on them. Professor Morkoc has authored several books and numerous book chapters and articles. He serves or has served as a consultant to some 20 major industrial laboratories. Professor Morkoc is, among others, a Fellow of the American Physical Society, the Material Research Society, and of the Optical Society of America.
The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They also deal with the properties and processes for thermal, optical and electrical systems, as well as magnetism and magnetic properties and spin-based device concepts. The result is a lucid presentation of the necessary basics of semiconductor and device physics and engineering, backed by an extensive reference section. Volume 2 is devoted to the electrical and optical properties of nitride materials and metal-semiconductor contacts and p-n junctions. It thus discusses both intrinsic and extrinsic current conduction mechanisms in both types of structures, with a detailed treatment of the theory behind carrier transport and scattering of low and high electric as well as magnetic fields. the volume concludes wit optical processes, both linear and non linear, in GaN and associated reduced dimensional structures, ensuring the fundamentals are well covered.

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