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An Essential Guide to Electronic Material Surfaces and Interfaces


An Essential Guide to Electronic Material Surfaces and Interfaces


1. Aufl.

von: Leonard J. Brillson

70,99 €

Verlag: Wiley
Format: PDF
Veröffentl.: 12.05.2016
ISBN/EAN: 9781119027133
Sprache: englisch
Anzahl Seiten: 320

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Beschreibungen

<p><i>An Essential Guide to Electronic Material Surfaces and Interfaces</i> is a streamlined yet comprehensive introduction that covers the basic physical properties of electronic materials, the experimental techniques used to measure them, and the theoretical methods used to understand, predict, and design them.</p> <p>Starting with the fundamental electronic properties of semiconductors and electrical measurements of semiconductor interfaces, this text introduces students to the importance of characterizing and controlling macroscopic electrical properties by atomic-scale techniques. The chapters that follow present the full range of surface and interface techniques now being used to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth for students to master the fundamental principles, with numerous examples to illustrate the strengths and limitations for specific applications. As well as references to the most authoritative sources for broader discussions, the text includes internet links to additional examples, mathematical derivations, tables, and literature references for the advanced student, as well as professionals in these fields. This textbook fills a gap in the existing literature for an entry-level course that provides the physical properties, experimental techniques, and theoretical methods essential for students and professionals to understand and participate in solid-state electronics, physics, and materials science research.</p> <p><i>An Essential Guide to Electronic Material Surfaces and Interfaces</i> is an introductory-to-intermediate level textbook suitable for students of physics, electrical engineering, materials science, and other disciplines. It is essential reading for any student or professional engaged in surface and interface research, semiconductor processing, or electronic device design. </p>
<p>Preface xiii</p> <p>About the Companion Websites xv</p> <p><b>1. Why Surfaces and Interfaces of Electronic Materials 1</b></p> <p>1.1 The Impact of Electronic Materials 1</p> <p>1.2 Surface and Interface Importance as Electronics Shrink 1</p> <p>1.3 Historical Background 5</p> <p>1.4 Next Generation Electronics 10</p> <p>1.5 Problems 10</p> <p>References 11</p> <p>Further Reading 13</p> <p><b>2. Semiconductor Electronic and Optical Properties 14</b></p> <p>2.1 The Semiconductor Band Gap 14</p> <p>2.2 The Fermi Level and Energy Band Parameters 15</p> <p>2.3 Band Bending at Semiconductor Surfaces and Interfaces 17</p> <p>2.4 Surfaces and Interfaces in Electronic Devices 17</p> <p>2.5 Effects of Localized States: Traps, Dipoles, and Barriers 19</p> <p>2.6 Summary 19</p> <p>2.7 Problems 20</p> <p>References 20</p> <p>Further Reading 21</p> <p><b>3. Electrical Measurements of Surfaces and Interfaces 22</b></p> <p>3.1 Sheet Resistance and Contact Resistivity 22</p> <p>3.2 Contact Measurements: Schottky Barrier Overview 23</p> <p>3.3 Heterojunction Band Offsets: Electrical Measurements 35</p> <p>3.4 Summary 38</p> <p>3.5 Problems 38</p> <p>References 39</p> <p>Further Reading 41</p> <p><b>4. Localized States at Surfaces and Interfaces 42</b></p> <p>4.1 Interface State Models 42</p> <p>4.2 Intrinsic Surface States 43</p> <p>4.3 Extrinsic Surface States 49</p> <p>4.4 The Solid State Interface: Changing Perspectives 52</p> <p>4.5 Problems 52</p> <p>References 53</p> <p>Further Reading 54</p> <p><b>5. Ultrahigh Vacuum Technology 55</b></p> <p>5.1 Ultrahigh Vacuum Chambers 55</p> <p>5.2 Pumps 57</p> <p>5.3 Manipulators 61</p> <p>5.4 Gauges 61</p> <p>5.5 Residual Gas Analysis 62</p> <p>5.6 Deposition Sources 62</p> <p>5.7 Deposition Monitors 64</p> <p>5.8 Summary 65</p> <p>5.9 Problems 65</p> <p>References 65</p> <p>Further Reading 66</p> <p><b>6. Surface and Interface Analysis 67</b></p> <p>6.1 Surface and Interface Techniques 67</p> <p>6.2 Excited Electron Spectroscopies 70</p> <p>6.3 Principles of Surface Sensitivity 72</p> <p>6.4 Multi-technique UHV Chambers 73</p> <p>6.5 Summary 75</p> <p>6.6 Problems 75</p> <p>References 75</p> <p>Further Reading 75</p> <p><b>7. Surface and Interface Spectroscopies 76</b></p> <p>7.1 Photoemission Spectroscopy 76</p> <p>7.2 Auger Electron Spectroscopy 89</p> <p>7.3 Electron Energy Loss Spectroscopy 98</p> <p>7.4 Rutherford Backscattering Spectrometry 104</p> <p>7.5 Surface and Interface Technique Summary 112</p> <p>7.6 Problems 113</p> <p>References 116</p> <p>Further Reading 117</p> <p><b>8. Dynamical Depth-Dependent Analysis and Imaging 118</b></p> <p>8.1 Ion Beam-Induced Surface Ablation 118</p> <p>8.2 Auger Electron Spectroscopy 119</p> <p>8.3 X-Ray Photoemission Spectroscopy 121</p> <p>8.4 Secondary Ion Mass Spectrometry 122</p> <p>8.5 Spectroscopic Imaging 128</p> <p>8.6 Depth-Resolved and Imaging Summary 129</p> <p>8.7 Problems 129</p> <p>References 130</p> <p>Further Reading 130</p> <p><b>9. Electron Beam Diffraction and Microscopy of Atomic-Scale Geometrical Structure 131</b></p> <p>9.1 Low Energy Electron Diffraction – Principles 131</p> <p>9.2 Reflection High Energy Electron Diffraction 141</p> <p>9.3 Scanning Electron Microscopy 144</p> <p>9.4 Transmission Electron Microscopy 145</p> <p>9.5 Electron Beam Diffraction and Microscopy Summary 148</p> <p>9.6 Problems 149</p> <p>References 150</p> <p>Further Reading 151</p> <p><b>10. Scanning Probe Techniques 152</b></p> <p>10.1 Atomic Force Microscopy 152</p> <p>10.2 Scanning Tunneling Microscopy 155</p> <p>10.3 Ballistic Electron Energy Microscopy 162</p> <p>10.4 Atomic Positioning 163</p> <p>10.5 Summary 164</p> <p>10.6 Problems 164</p> <p>References 165</p> <p>Further Reading 165</p> <p><b>11. Optical Spectroscopies 166</b></p> <p>11.1 Overview 166</p> <p>11.2 Optical Absorption 166</p> <p>11.3 Modulation Techniques 168</p> <p>11.4 Multiple Surface Interaction Techniques 169</p> <p>11.5 Spectroscopic Ellipsometry 171</p> <p>11.6 Surface Enhanced Raman Spectroscopy 171</p> <p>11.7 Surface Photoconductivity 174</p> <p>11.8 Surface Photovoltage Spectroscopy 175</p> <p>11.9 Photoluminescence Spectroscopy 180</p> <p>11.10 Cathodoluminescence Spectroscopy 181</p> <p>11.11 Summary 190</p> <p>11.12 Problems 191</p> <p>References 192</p> <p>Further Reading 192</p> <p><b>12. Electronic Material Surfaces 193</b></p> <p>12.1 Geometric Structure 193</p> <p>12.2 Chemical Structure 196</p> <p>12.3 Electronic Structure 203</p> <p>12.4 Summary 209</p> <p>12.5 Problems 210</p> <p>References 211</p> <p>Further Reading 212</p> <p><b>13. Surface Electronic Applications 213</b></p> <p>13.1 Charge Transfer and Band Bending 213</p> <p>13.2 Oxide Gas Sensors 216</p> <p>13.3 Granular Gas Sensors 217</p> <p>13.4 Nanowire Sensors 217</p> <p>13.5 Chemical and Biosensors 217</p> <p>13.6 Surface Electronic Temperature, Pressure, and Mass Sensors 220</p> <p>13.7 Summary 220</p> <p>13.8 Problems 221</p> <p>References 222</p> <p>Further Reading 222</p> <p><b>14. Semiconductor Heterojunctions 223</b></p> <p>14.1 Geometrical Structure 223</p> <p>14.2 Chemical Structure 230</p> <p>14.3 Electronic Structure 232</p> <p>14.4 Conclusions 245</p> <p>14.5 Problems 246</p> <p>References 247</p> <p>Further Reading 248</p> <p><b>15. Metal–Semiconductor Interfaces 249</b></p> <p>15.1 Overview 249</p> <p>15.2 Metal–Semiconductor Interface Dipoles 249</p> <p>15.3 Interface States 251</p> <p>15.4 Self-Consistent Electrostatic Calculations 258</p> <p>15.5 Experimental Schottky Barriers 259</p> <p>15.6 Interface Barrier Height Engineering 264</p> <p>15.7 Atomic-Scale Control 266</p> <p>15.8 Summary 272</p> <p>15.9 Problems 272</p> <p>References 273</p> <p>Further Reading 275</p> <p><b>16. Next Generation Surfaces and Interfaces 276</b></p> <p>16.1 Current Status 276</p> <p>16.2 Current Device Challenges 278</p> <p>16.3 Emerging Directions 279</p> <p>16.4 The Essential Guide Conclusions 282</p> <p><b>Appendices</b></p> <p>Appendix A: Glossary of Commonly Used Symbols 283</p> <p>Appendix B: Table of Acronyms 286</p> <p>Appendix C: Table of Physical Constants and Conversion Factors 290</p> <p>Appendix D: Semiconductor Properties 291</p> <p>Index 293</p>
<p><b>Leonard Brillson</b> is a professor of Electrical & Computer Engineering, of Physics, and a Center for Materials Research Scholar at The Ohio State University in Columbus, OH, USA. Prior to that, he directed Xerox Corporation's Materials Research Laboratory and had responsibility for Xerox's long-range physical science and technology programs at the company's research headquarters in Rochester, N.Y. He is a Fellow of IEEE, AAAS, AVS, APS, and MRS and a former Governing Board member of the American Institute of Physics. Professor Brillson has authored over 350 scientific publications in solid-state physics, microelectronics, surface science and materials science and received numerous scientific awards, including the AVS Gaede-Langmuir Award and the National Science Foundation American Competitiveness and Innovation Fellowship for leadership in the field of electrical and computer engineering.</p>

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