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<p>Preface xi</p> <p><b>1 History and Introduction of QDs and QDLEDs 1</b></p> <p>1.1 Preparation Route of Quantum Dots 3</p> <p>1.2 Light-Emitting Characteristics of Quantum Dots 3</p> <p>1.2.1 Particle Size and Emission Color 3</p> <p>1.2.2 Quantum Dot Optical Property 4</p> <p>1.2.2.1 Quantum Surface Effect 4</p> <p>1.2.2.2 Quantum Size Effect 4</p> <p>1.2.2.3 Quantum Confinement Effect 5</p> <p>1.2.2.4 Quantum Tunnelling Effect 5</p> <p>1.2.2.5 Quantum Optical Properties 6</p> <p>1.2.3 Core–Shell Structure of QDs 8</p> <p>1.2.4 Continuously Gradated Core–Shell Structure of QDs (cg-QDs) 12</p> <p>1.2.5 Typical QDs Materials 14</p> <p>1.2.5.1 II–VI Semiconductor QDs 16</p> <p>1.2.5.2 IV–VI Semiconductor QDs 17</p> <p>1.2.5.3 II 3 –v 2 Semiconductor QDs 17</p> <p>1.2.5.4 Ternary I–III–VI 2 Chalcopyrite Semiconductor QDs 17</p> <p>1.2.5.5 Single Element-Based Semiconductor QDs 17</p> <p>1.3 Application of Quantum Dots on Display Devices 18</p> <p>1.3.1 The Basic Structure of QDLED 18</p> <p>1.3.2 Main Factors Affecting QDLED Light Emission 19</p> <p>1.3.2.1 Auger Recombination (AR) 19</p> <p>1.3.2.2 Fluorescence Resonance Energy Transfer 21</p> <p>1.3.2.3 Surface Traps and Field Emission Burst 22</p> <p>1.3.3 History of QDLED Development 22</p> <p>1.4 Conclusion and Remarks 27</p> <p>References 28</p> <p><b>2 Colloidal Semiconductor Quantum Dot LED Structure and Principles 33</b></p> <p>2.1 Basic Concepts 33</p> <p>2.1.1 Color Purity 33</p> <p>2.1.2 Solution Processability 34</p> <p>2.1.3 Stability 35</p> <p>2.1.4 Surface States of Quantum Dots 36</p> <p>2.1.5 Energy Levels and Energy Bands 36</p> <p>2.1.6 Metals, Semiconductors, and Insulators 37</p> <p>2.1.7 Electrons and Holes 38</p> <p>2.1.8 Fermi Distribution Function and Fermi Energy Level 39</p> <p>2.1.9 Schottky Barrier 39</p> <p>2.1.10 Energy Level Alignment 40</p> <p>2.2 Colloidal Quantum Dot Light-Emitting Devices 40</p> <p>2.2.1 The Basic Structure of QDLED 41</p> <p>2.2.2 The Working Principle of QDLED 43</p> <p>2.2.3 Operating Parameters of QDLED 44</p> <p>2.2.3.1 Turn-on Voltage 44</p> <p>2.2.3.2 Luminous Brightness 44</p> <p>2.2.3.3 Luminous Efficiency 44</p> <p>2.2.3.4 Luminescence Color 45</p> <p>2.2.3.5 Luminous Lifetime 45</p> <p>2.2.3.6 QDLED Device Fabrication Process 48</p> <p>References 48</p> <p><b>3 Synthesis and Characterization of Colloidal Semiconductor Quantum Dot Materials 51</b></p> <p>3.1 Background 51</p> <p>3.2 Synthesis and Post-processing of Colloidal Quantum Dots 53</p> <p>3.2.1 Direct Heating Method and Hot Injection Synthesis Method 53</p> <p>3.2.1.1 Hot-Injection Method 54</p> <p>3.2.1.2 Direct Heating Method 55</p> <p>3.2.2 Precursor Chemistry 56</p> <p>3.2.3 Ligating and Non-ligating Solvents 56</p> <p>3.2.4 Mechanism of Nucleation and Growth of Colloidal Quantum Dots 58</p> <p>3.2.5 Size Distribution Focus and Size Distribution Scatter 59</p> <p>3.2.6 Crystalline Species-Mediated Growth and Orientation of Nanocrystals Attachment Growth 60</p> <p>3.2.7 Synthesis Methods and Band Gap Regulation Engineering of Nuclear-Shell Quantum Dots 61</p> <p>3.2.7.1 Non-alloyed Core–Shell Quantum Dots 63</p> <p>3.2.7.2 Alloy Core–Shell Quantum Dots 64</p> <p>3.2.8 Surface Chemistry of Colloidal Quantum Dots 65</p> <p>3.2.8.1 Covalent Bond Classification Method 65</p> <p>3.2.8.2 Entropic Ligands 66</p> <p>3.3 Material Characterization 66</p> <p>3.3.1 Ultraviolet–Visible (UV–Vis) Absorption and Fluorescence Spectra 67</p> <p>3.3.2 Nuclear Magnetic Resonance Spectroscopy 69</p> <p>3.3.3 Fourier Transform Infrared Spectroscopy (FTIR) 71</p> <p>3.3.4 X-Ray Photoelectron Spectroscopy (XPS) 74</p> <p>3.3.5 Transmission Electron Microscopy 76</p> <p>3.3.6 Small-Angle X-Ray Scattering and Wide-Angle X-Ray Scattering 76</p> <p>3.3.7 X-Ray Diffractometer 77</p> <p>3.3.8 X-Ray Absorption Fine Structure Spectra 78</p> <p>3.3.9 Measurement of Fluorescence Quantum Yield 79</p> <p>3.4 Conclusion and Outlook 79</p> <p>References 81</p> <p><b>4 Red Quantum Dot Light-Emitting Diodes 87</b></p> <p>4.1 Background 87</p> <p>4.2 Red Light Quantum Dot Materials 88</p> <p>4.2.1 Materials 89</p> <p>4.2.2 Quantum Dot Structure Design and Optimization 90</p> <p>4.2.3 Surface Ligands 91</p> <p>4.2.4 Core–Shell Structure 94</p> <p>4.2.5 Alloy Core–Shell Structure 96</p> <p>4.3 Red QDLED Devices 97</p> <p>4.3.1 Red QDLED Device Architecture Development 97</p> <p>4.3.2 Common Device Structures 99</p> <p>4.4 Conclusion and Outlook 102</p> <p>References 104</p> <p><b>5 Green Quantum Dot LED Materials and Devices 111</b></p> <p>5.1 Background 111</p> <p>5.2 Commonly Used Luminescent Layer Materials in Green QDLEDs 120</p> <p>5.2.1 Discrete Core/Shell Quantum Dots 120</p> <p>5.2.2 Alloyed Core/Shell Quantum Dots 121</p> <p>5.2.3 Core/Multilayer Shell Quantum Dots 121</p> <p>5.3 Development of Device Structures for Green QDLEDs 122</p> <p>5.4 Factors Affecting the Performance of Green QDLEDs 125</p> <p>5.4.1 QD Ligand Effect 126</p> <p>5.4.2 QD Core/Shell Structure 129</p> <p>5.4.3 Optimization of the Device Structure 130</p> <p>5.4.4 Other Strategies to Improve Device Performance 132</p> <p>5.5 Summary and Outlook 134</p> <p>References 135</p> <p><b>6 Blue Quantum Dot Light-Emitting Diodes 141</b></p> <p>6.1 Introduction 141</p> <p>6.2 Blue Quantum Dot Luminescent Materials 143</p> <p>6.2.1 Blue Quantum Dots Containing Cadmium 145</p> <p>6.2.2 Cadmium-Free Quantum Dots 149</p> <p>6.2.2.1 Quantum Dots Based on InP 149</p> <p>6.2.2.2 Quantum Dots Based on ZnSe 151</p> <p>6.2.2.3 Quantum Dots Based on Cu 153</p> <p>6.2.2.4 Quantum Dots Based on AlSb 155</p> <p>6.3 Optimization of Charge Transport Layer (CTL) 155</p> <p>6.3.1 Hole Transport Layer 156</p> <p>6.3.2 Electron Transport Layer 161</p> <p>6.4 Device Structure 164</p> <p>6.5 Summary 166</p> <p>References 168</p> <p><b>7 Near-Infrared Quantum Dots (NIR QDs) 173</b></p> <p>7.1 Introduction of Near-Infrared Quantum Dots 173</p> <p>7.2 Near-Infrared Quantum Dot Materials 174</p> <p>7.2.1 Chalcogenide Lead Quantum Dots 176</p> <p>7.2.2 Chalcogenide Cadmium Quantum Dots 177</p> <p>7.2.3 Silicon Quantum Dots 178</p> <p>7.3 Optimization of Near-Infrared Quantum Dot Materials 179</p> <p>7.3.1 Regulation of Near-Infrared Quantum Dots by Ligand Engineering 179</p> <p>7.3.2 Control of Near-Infrared Quantum Dots by Core/Shell Structure 180</p> <p>7.3.3 Quantum Dots in the Matrix 181</p> <p>7.4 Summary and Prospect 182</p> <p>References 183</p> <p><b>8 White QDLED 187</b></p> <p>8.1 Generation of White Light 187</p> <p>8.2 Quantum Dots for White LEDs 188</p> <p>8.2.1 Yellow–Blue Composite White Light Quantum Dots 189</p> <p>8.2.1.1 Cadmium-Containing Yellow Light Quantum Dots 189</p> <p>8.2.1.2 Cadmium-Free Yellow Light Quantum Dots 189</p> <p>8.2.2 Three-Base Color Quantum Dot Composite 193</p> <p>8.2.3 Quantum Dots with Direct White Light Emission 197</p> <p>8.3 Summary Outlook 200</p> <p>References 203</p> <p><b>9 Non-Cadmium Quantum Dot Light-Emitting Materials and Devices 207</b></p> <p>9.1 Introduction 207</p> <p>9.2 Quantum Dots and QDLED 208</p> <p>9.2.1 InP 208</p> <p>9.2.2 ZnSe 215</p> <p>9.2.3 I-iii-vi 218</p> <p>9.3 Methods for Optimizing QDLED Performance 222</p> <p>9.3.1 Ligand Engineering 223</p> <p>9.3.2 Shell Engineering 224</p> <p>9.3.3 QDLED Device Structure Optimization 225</p> <p>9.4 Summary and Outlook 227</p> <p>References 230</p> <p><b>10 AC-Driven Quantum Dot Light-Emitting Diodes 235</b></p> <p>10.1 Principle of Luminescence of DC and AC-Driven QDLEDs 236</p> <p>10.2 Mechanism of Double-Emission Tandem Structure of AC QDLEDs 239</p> <p>10.2.1 Field-Generated AC QDLEDs 240</p> <p>10.2.2 Half-Field to Half-Injection AC QDLEDs 242</p> <p>10.2.3 AC/DC Dual Drive Mode QDLEDs 244</p> <p>10.3 Optimization Strategies for AC QDLEDs 245</p> <p>10.3.1 Optimization of the Field-Induced AC QDLED 247</p> <p>10.3.1.1 Dielectric Layer Optimization 248</p> <p>10.3.1.2 Quantum Dot Layer Optimization 250</p> <p>10.3.2 Optimization of Half-Field-Driven Half-Injected AC QDLEDs 251</p> <p>10.3.2.1 Charge Generation Layer Optimization 254</p> <p>10.3.2.2 Tandem Structure 254</p> <p>10.3.2.3 AC/DC Dual Drive Mode QDLED Optimization 255</p> <p>10.3.3 Conclusion and Future Direction of AC-QDLED 256</p> <p>References 257</p> <p><b>11 Stability Study and Decay Mechanism of Quantum Dot Light-Emitting Diodes 259</b></p> <p>11.1 Quantum Dot Light-Emitting Diode Stability Research Status 259</p> <p>11.2 Factors Affecting the Stability of Quantum Dot Light-Emitting Diodes 261</p> <p>11.2.1 Quantum Dot Light-Emitting Layer 261</p> <p>11.2.2 Hole Transport Layer 263</p> <p>11.2.3 Electronic Transport Layer 265</p> <p>11.2.4 Other Functional Layers 267</p> <p>11.3 Quantum Dot Light-Emitting Diode Efficiency Decay Mechanism 268</p> <p>11.4 Aging Mechanisms of QDLEDs 271</p> <p>11.4.1 Positive Aging 272</p> <p>11.4.2 Negative Aging 273</p> <p>11.4.3 Electron Transport Layer 274</p> <p>11.4.4 Hole Transport Layer 275</p> <p>11.4.5 QDs Layer 276</p> <p>11.5 Characterization Technologies for QDLEDs 278</p> <p>11.5.1 Transient Electroluminescence 279</p> <p>11.5.2 Electro-Absorption (EA) Spectroscopy 281</p> <p>11.5.3 In-Situ EL–PL Measurement 282</p> <p>11.5.4 Differential Absorption Spectroscopy 283</p> <p>11.5.5 Displacement Current Measurement DCM Technology 285</p> <p>11.6 Outlook 286</p> <p>References 287</p> <p><b>12 Electron/Hole Injection and Transport Materials in Quantum Dot Light-Emitting Diodes 291</b></p> <p>12.1 Introduction 291</p> <p>12.2 Charge-Transport Mechanisms 292</p> <p>12.3 Electron Transport Materials (ETMs) for QDLED 293</p> <p>12.3.1 Metal-Doped ETMs 293</p> <p>12.3.2 Metal Salt-Doped ETMs 296</p> <p>12.3.3 Design of Composite Materials ETMs 296</p> <p>12.3.4 Polymer-Modified ETMs 296</p> <p>12.3.5 Inorganic Organic Hybrid ETMs 296</p> <p>12.3.6 Double-Stacked ETMs 297</p> <p>12.4 Electron Injection Materials for QDLED 299</p> <p>12.5 Hole Transport Materials for QDLED 301</p> <p>12.5.1 Doping of HTMs 305</p> <p>12.5.2 Compositions of HTMS 309</p> <p>12.5.3 New HTM Materials for QDLED 311</p> <p>12.6 Hole Injection Materials for QDLED 315</p> <p>12.7 Summary and Outlook 321</p> <p>References 322</p> <p><b>13 Quantum Dot Industrial Development and Patent Layout 327</b></p> <p>13.1 Introduction 327</p> <p>13.2 Patent Layout 330</p> <p>13.2.1 Nanosys 330</p> <p>13.2.2 SAMSUNG 332</p> <p>13.2.3 Nanoco 335</p> <p>13.2.4 Najing Tech 338</p> <p>13.2.5 CSOT 344</p> <p>13.2.6 BOE 347</p> <p>13.2.7 TCL 351</p> <p>13.3 Summary and Outlook 355</p> <p>References 355</p> <p><b>14 Patterning Techniques for Quantum Dot Light-Emitting Diodes (QDLED) 361</b></p> <p>14.1 Introduction 361</p> <p>14.2 Photolithography 361</p> <p>14.3 Micro-Contact Transfer 363</p> <p>14.4 Inkjet Printing 366</p> <p>14.5 Other Patterning Techniques 368</p> <p>14.6 Conclusion 369</p> <p>References 370</p> <p>Index 373</p>

<p><b>Hong Meng, PhD,</b> is a Professor in the School of Advanced Materials at the Peking University Shenzhen Graduate School, China. After receiving his PhD from University of California, Los Angeles (UCLA) in 2002, he has spent the last twenty years of his career working at the Institute of Materials Science and Engineering (IMRE) in Singapore, Lucent Technologies Bell Labs, and DuPont Experimental Station.</p>

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